STB8NM60T4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB8NM60T4
SMD Transistor Code: B8NM60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
Package: D2PAK
STB8NM60T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB8NM60T4 Datasheet (PDF)
1.1. stb8nm60t4.pdf 
Size:554K _upd
STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS(on) ID Pw 3 1 STD5NM60 650 V < 1 Ω 5 A 96 W 3 2 DPAK STD5NM60-1 650 V < 1 Ω 5 A 96 W 1 TO-220FP STB8NM60 650 V < 1 Ω 5 A 100 W 3 1 STP8NM60 650 V < 1 Ω 8 A 100 W D²PAK STP8NM60FP 650 V < 1 Ω 8 A(1) 30 W 3 ■100% ava
2.1. stb8nm60n.pdf Size:698K _upd
STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 Ω 7 A 1 IPAK STD8NM60N 650 V < 0.65 Ω 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 Ω 7 A 1 STF8NM60N 650 V < 0.65 Ω 7 A(1) D²PAK STP8NM60N 650 V < 0.65 Ω 7 A 3 3 1 2 1. Limited only by ma
2.2. stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf Size:698K _st
STx8NM60N N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 ? 7 A 1 IPAK STD8NM60N 650 V < 0.65 ? 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 ? 7 A 1 STF8NM60N 650 V < 0.65 ? 7 A(1) D?PAK STP8NM60N 650 V < 0.65 ? 7 A 3 3 1 2 1. Limited only by maximum temperature
2.3. stb8nm60d stp8nm60d.pdf Size:746K _st
STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9? - 8A - TO-220/D2PAK Fast Diode MDmesh™ Power MOSFET General features Type VDSS RDS(on) ID PTOT STB8NM60D 600V < 1.0? 8A 100W STP8NM60D 600V < 1.0? 8A 100W ¦ High dv/dt and avalanche capabilities 3 3 2 1 1 ¦ 100% avalanche rated D?PAK TO-220 ¦ Low input capacitance and gate charge ¦ Low gate input resistance ¦ Fast internal recovery diode
2.4. stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf Size:700K _st
STx8NM60N N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 ? 7 A 1 IPAK STD8NM60N 650 V < 0.65 ? 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 ? 7 A 1 STF8NM60N 650 V < 0.65 ? 7 A(1) D?PAK STP8NM60N 650 V < 0.65 ? 7 A 3 3 1 2 1. Limited only by maximum temperature
2.5. stp8nm60 std5nm60 stb8nm60.pdf Size:559K _st
STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS(on) ID Pw 3 1 STD5NM60 650 V < 1 ? 5 A 96 W 3 2 DPAK STD5NM60-1 650 V < 1 ? 5 A 96 W 1 TO-220FP STB8NM60 650 V < 1 ? 5 A 100 W 3 1 STP8NM60 650 V < 1 ? 8 A 100 W D?PAK STP8NM60FP 650 V < 1 ? 8 A(1) 30 W 3 ¦ 100% avalanche tested 3 2 2
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