All MOSFET. STB8NM60T4 Datasheet

 

STB8NM60T4 Datasheet and Replacement


   Type Designator: STB8NM60T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: D2PAK
      - MOSFET Cross-Reference Search

 

STB8NM60T4 Datasheet (PDF)

 ..1. Size:554K  st
 stb8nm60t4 std5nm60-1 std5nm60t4 stp8nm60fp.pdf pdf_icon

STB8NM60T4

STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V

 6.1. Size:698K  st
 stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf pdf_icon

STB8NM60T4

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

 6.2. Size:559K  st
 stp8nm60 std5nm60 stb8nm60.pdf pdf_icon

STB8NM60T4

STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V

 6.3. Size:746K  st
 stb8nm60d stp8nm60d.pdf pdf_icon

STB8NM60T4

STB8NM60DSTP8NM60DN-CHANNEL 600V - 0.9 - 8A - TO-220/D2PAKFast Diode MDmesh Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB8NM60D 600V

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Keywords - STB8NM60T4 MOSFET datasheet

 STB8NM60T4 cross reference
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