All MOSFET. IRFS4610PBF Datasheet

 

IRFS4610PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFS4610PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 73 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 90 nC

Rise Time (tr): 87 nS

Drain-Source Capacitance (Cd): 260 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO-263

IRFS4610PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFS4610PBF Datasheet (PDF)

1.1. irfs4610pbf irfsl4610pbf.pdf Size:399K _upd

IRFS4610PBF
IRFS4610PBF

PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m ID 73A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

3.1. irfs4615pbf irfsl4615pbf.pdf Size:365K _upd

IRFS4610PBF
IRFS4610PBF

PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 34.5m l High Speed Power Switching G max. 42m l Hard Switched and High Frequency Circuits ID 33A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capac

 4.1. irfs460.pdf Size:231K _upd

IRFS4610PBF
IRFS4610PBF

IRFS460 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology RDS(on) = 0.25Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 12.4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3PF ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

4.2. irfs4620pbf irfsl4620pbf.pdf Size:359K _upd

IRFS4610PBF
IRFS4610PBF

PD -96203 IRFS4620PbF IRFSL4620PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 63.7m l High Speed Power Switching G max. 77.5m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

 
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