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IRFS4610PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFS4610PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 190 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 73 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 87 ns
   Cossⓘ - Выходная емкость: 260 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для IRFS4610PBF

 

 

IRFS4610PBF Datasheet (PDF)

 ..1. Size:399K  international rectifier
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFS4610PBF
IRFS4610PBF

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 ..2. Size:399K  infineon
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFS4610PBF
IRFS4610PBF

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 6.1. Size:340K  international rectifier
auirfs4610trl.pdf

IRFS4610PBF
IRFS4610PBF

PD - 96325AUTOMOTIVE GRADEAUIRFB4610AUIRFS4610Features HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS100V Enhanced dV/dT and dI/dT capabilityRDS(on) typ.11m 175C Operating Temperature Fast Switching max. 14mG Repetitive Avalanche Allowed up to TjmaxID73A Lead-Free, RoHS Compliant S Automotive Qualified *DDescripti

 6.2. Size:717K  infineon
auirfb4610 auirfs4610.pdf

IRFS4610PBF
IRFS4610PBF

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 6.3. Size:381K  infineon
irfb4610 irfs4610 irfsl4610.pdf

IRFS4610PBF
IRFS4610PBF

PD - 96906BIRFB4610IRFS4610IRFSL4610ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11m:RDS(on) typ.l Hard Switched and High Frequency CircuitsGmax. 14m:Benefitsl Improved Gate, Avalanche and Dynamic dV/dtID 73ASRuggednessl Fully Characterized Capacita

 6.4. Size:258K  inchange semiconductor
irfs4610.pdf

IRFS4610PBF
IRFS4610PBF

Isc N-Channel MOSFET Transistor IRFS4610FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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