All MOSFET. IRFS634B Datasheet

 

IRFS634B Datasheet and Replacement


   Type Designator: IRFS634B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO-220F
 

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IRFS634B Datasheet (PDF)

 ..1. Size:858K  fairchild semi
 irfs634b.pdf pdf_icon

IRFS634B

November 2001IRF634B/IRFS634B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

 ..2. Size:859K  fairchild semi
 irf634b irfs634b.pdf pdf_icon

IRFS634B

November 2001IRF634B/IRFS634B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

 7.1. Size:277K  1
 irfs634.pdf pdf_icon

IRFS634B

 7.2. Size:296K  1
 irfs634 irfs635.pdf pdf_icon

IRFS634B

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History: IRFS644B

Keywords - IRFS634B MOSFET datasheet

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