All MOSFET. IRFS640B Datasheet

 

IRFS640B Datasheet and Replacement


   Type Designator: IRFS640B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220F
 

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IRFS640B Datasheet (PDF)

 ..1. Size:916K  fairchild semi
 irf640b irfs640b.pdf pdf_icon

IRFS640B

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to

 ..2. Size:922K  fairchild semi
 irfs640b.pdf pdf_icon

IRFS640B

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to

 7.1. Size:301K  1
 irfs640 irfs641.pdf pdf_icon

IRFS640B

 7.2. Size:508K  samsung
 irfs640a.pdf pdf_icon

IRFS640B

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ. )1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

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Keywords - IRFS640B MOSFET datasheet

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