IRFS640B Specs and Replacement
Type Designator: IRFS640B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220F
IRFS640B substitution
- MOSFET ⓘ Cross-Reference Search
IRFS640B datasheet
irfs640a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ. ) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒
Detailed specifications: IRFS4710 , IRFS4710PBF , IRFS52N15DPBF , IRFS5615PBF , IRFS5620PBF , IRFS59N10DPBF , IRFS614B , IRFS634B , BS170 , IRFS644B , IRFS654B , IRFS730B , IRFS740B , IRFS7430-7PPBF , IRFS7430PBF , IRFS7434PBF , IRFS7434-7PPBF .
Keywords - IRFS640B MOSFET specs
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