IRFS730B PDF and Equivalents Search

 

IRFS730B Specs and Replacement

Type Designator: IRFS730B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220F

IRFS730B substitution

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IRFS730B datasheet

 ..1. Size:904K  fairchild semi
 irfs730b.pdf pdf_icon

IRFS730B

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 7.1. Size:286K  1
 irfs730 irfs731.pdf pdf_icon

IRFS730B

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 7.2. Size:309K  1
 irfs730 irfs731 irfs732 irfs733.pdf pdf_icon

IRFS730B

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 7.3. Size:506K  samsung
 irfs730a.pdf pdf_icon

IRFS730B

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒

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Detailed specifications: IRFS5615PBF , IRFS5620PBF , IRFS59N10DPBF , IRFS614B , IRFS634B , IRFS640B , IRFS644B , IRFS654B , IRF1407 , IRFS740B , IRFS7430-7PPBF , IRFS7430PBF , IRFS7434PBF , IRFS7434-7PPBF , IRFS7437-7PPBF , IRFS7437PBF , IRFS7440PBF .

History: STK3NA50

Keywords - IRFS730B MOSFET specs

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