All MOSFET. IRFS730B Datasheet

 

IRFS730B Datasheet and Replacement


   Type Designator: IRFS730B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220F
 

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IRFS730B Datasheet (PDF)

 ..1. Size:904K  fairchild semi
 irfs730b.pdf pdf_icon

IRFS730B

November 2001IRF730B/IRFS730B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

 7.1. Size:286K  1
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IRFS730B

 7.2. Size:309K  1
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IRFS730B

 7.3. Size:506K  samsung
 irfs730a.pdf pdf_icon

IRFS730B

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

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Datasheet: IRFS5615PBF , IRFS5620PBF , IRFS59N10DPBF , IRFS614B , IRFS634B , IRFS640B , IRFS644B , IRFS654B , P0903BDG , IRFS740B , IRFS7430-7PPBF , IRFS7430PBF , IRFS7434PBF , IRFS7434-7PPBF , IRFS7437-7PPBF , IRFS7437PBF , IRFS7440PBF .

Keywords - IRFS730B MOSFET datasheet

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