IRFS820B PDF and Equivalents Search

 

IRFS820B Specs and Replacement

Type Designator: IRFS820B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO-220F

IRFS820B substitution

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IRFS820B datasheet

 ..1. Size:866K  fairchild semi
 irf820b irfs820b.pdf pdf_icon

IRFS820B

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 7.1. Size:284K  1
 irfs820 irfs821.pdf pdf_icon

IRFS820B

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 7.2. Size:310K  1
 irfs820 irfs821 irfs822 irfs823.pdf pdf_icon

IRFS820B

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 7.3. Size:502K  samsung
 irfs820a.pdf pdf_icon

IRFS820B

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

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Detailed specifications: IRFS7537PBF, IRFS7540PBF, IRFS7730PBF, IRFS7730-7PPBF, IRFS7734PBF, IRFS7734-7PPBF, IRFS7762PBF, IRFS7787PBF, 7N60, IRFS840B, IRFS9N60APBF, IRFSL11N50APBF, IRFSL17N20D, IRFSL17N20DPBF, IRFSL23N15D, IRFSL23N15DPBF, IRFSL3004PBF

Keywords - IRFS820B MOSFET specs

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