All MOSFET. IRFS820B Datasheet

 

IRFS820B Datasheet and Replacement


   Type Designator: IRFS820B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO-220F
 

 IRFS820B substitution

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IRFS820B Datasheet (PDF)

 ..1. Size:866K  fairchild semi
 irf820b irfs820b.pdf pdf_icon

IRFS820B

November 2001IRF820B/IRFS820B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 500V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 7.1. Size:284K  1
 irfs820 irfs821.pdf pdf_icon

IRFS820B

 7.2. Size:310K  1
 irfs820 irfs821 irfs822 irfs823.pdf pdf_icon

IRFS820B

 7.3. Size:502K  samsung
 irfs820a.pdf pdf_icon

IRFS820B

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

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History: CJA03N10S | AO3409

Keywords - IRFS820B MOSFET datasheet

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