All MOSFET. IRFSL11N50APBF Datasheet

 

IRFSL11N50APBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFSL11N50APBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 51 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-262

 IRFSL11N50APBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFSL11N50APBF Datasheet (PDF)

 ..1. Size:827K  international rectifier
 irfsl11n50apbf.pdf

IRFSL11N50APBF IRFSL11N50APBF

PD- 95231IRFSL11N50APbF Lead-Free04/29/04Document Number: 91288 www.vishay.com1IRFSL11N50APbFDocument Number: 91288 www.vishay.com2IRFSL11N50APbFDocument Number: 91288 www.vishay.com3IRFSL11N50APbFDocument Number: 91288 www.vishay.com4IRFSL11N50APbFDocument Number: 91288 www.vishay.com5IRFSL11N50APbFDocument Number: 91288 www.vishay.com6IRFSL11

 ..2. Size:307K  vishay
 irfsl11n50apbf sihfsl11n50a.pdf

IRFSL11N50APBF IRFSL11N50APBF

IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK

 3.1. Size:107K  international rectifier
 irfsl11n50a.pdf

IRFSL11N50APBF IRFSL11N50APBF

PD- 91847AIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance

 3.2. Size:305K  vishay
 irfsl11n50a sihfsl11n50a.pdf

IRFSL11N50APBF IRFSL11N50APBF

IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK

 4.1. Size:111K  international rectifier
 irfsl11n50.pdf

IRFSL11N50APBF IRFSL11N50APBF

PD- 91847BIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFET Power MOSFETs from International Rectifierprovide the designer with the best combination of fast switching, ruggedizeddevice design, low

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History: FQD20N06

 

 
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