IRFSL11N50APBF PDF and Equivalents Search

 

IRFSL11N50APBF Specs and Replacement

Type Designator: IRFSL11N50APBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 208 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-262

IRFSL11N50APBF substitution

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IRFSL11N50APBF datasheet

 ..1. Size:827K  international rectifier
 irfsl11n50apbf.pdf pdf_icon

IRFSL11N50APBF

PD- 95231 IRFSL11N50APbF Lead-Free 04/29/04 Document Number 91288 www.vishay.com 1 IRFSL11N50APbF Document Number 91288 www.vishay.com 2 IRFSL11N50APbF Document Number 91288 www.vishay.com 3 IRFSL11N50APbF Document Number 91288 www.vishay.com 4 IRFSL11N50APbF Document Number 91288 www.vishay.com 5 IRFSL11N50APbF Document Number 91288 www.vishay.com 6 IRFSL11... See More ⇒

 ..2. Size:307K  vishay
 irfsl11n50apbf sihfsl11n50a.pdf pdf_icon

IRFSL11N50APBF

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK ... See More ⇒

 3.1. Size:107K  international rectifier
 irfsl11n50a.pdf pdf_icon

IRFSL11N50APBF

PD- 91847A IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance ... See More ⇒

 3.2. Size:305K  vishay
 irfsl11n50a sihfsl11n50a.pdf pdf_icon

IRFSL11N50APBF

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK ... See More ⇒

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Detailed specifications: IRFS7730-7PPBF, IRFS7734PBF, IRFS7734-7PPBF, IRFS7762PBF, IRFS7787PBF, IRFS820B, IRFS840B, IRFS9N60APBF, IRF830, IRFSL17N20D, IRFSL17N20DPBF, IRFSL23N15D, IRFSL23N15DPBF, IRFSL3004PBF, IRFSL3006PBF, IRFSL3107PBF, IRFSL31N20DPBF

Keywords - IRFSL11N50APBF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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