IRFSL31N20DPBF PDF and Equivalents Search

 

IRFSL31N20DPBF Specs and Replacement

Type Designator: IRFSL31N20DPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: TO-262

IRFSL31N20DPBF substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFSL31N20DPBF datasheet

 ..1. Size:290K  international rectifier
irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf pdf_icon

IRFSL31N20DPBF

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur... See More ⇒

 2.1. Size:290K  international rectifier
irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf pdf_icon

IRFSL31N20DPBF

IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur... See More ⇒

 3.1. Size:256K  inchange semiconductor
irfsl31n20d.pdf pdf_icon

IRFSL31N20DPBF

Isc N-Channel MOSFET Transistor IRFSL31N20D FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage ... See More ⇒

 7.1. Size:371K  international rectifier
irfs3107pbf irfsl3107pbf.pdf pdf_icon

IRFSL31N20DPBF

PD -97144A IRFS3107PbF IRFSL3107PbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.5m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 230A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dyn... See More ⇒

Detailed specifications: IRFSL11N50APBF, IRFSL17N20D, IRFSL17N20DPBF, IRFSL23N15D, IRFSL23N15DPBF, IRFSL3004PBF, IRFSL3006PBF, IRFSL3107PBF, MMIS60R580P, IRFSL3206PBF, IRFSL3207, IRFSL3207ZPBF, IRFSL3306PBF, IRFSL3307ZPBF, IRFSL3607PBF, IRFSL3806PBF, IRFSL38N20DPBF

Keywords - IRFSL31N20DPBF MOSFET specs

 IRFSL31N20DPBF cross reference

 IRFSL31N20DPBF equivalent finder

 IRFSL31N20DPBF pdf lookup

 IRFSL31N20DPBF substitution

 IRFSL31N20DPBF replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.