All MOSFET. IRFSL38N20DPBF Datasheet

 

IRFSL38N20DPBF Datasheet and Replacement


   Type Designator: IRFSL38N20DPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: TO-262
 

 IRFSL38N20DPBF substitution

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IRFSL38N20DPBF Datasheet (PDF)

 ..1. Size:715K  international rectifier
irfsl38n20dpbf.pdf pdf_icon

IRFSL38N20DPBF

PD - 97001APROVISIONALIRFB38N20DPbF IRFS38N20DPbFSMPS MOSFET IRFSL38N20DPbFHEXFET Power MOSFETApplicationsl High frequency DC-DC converters Key Parametersl Plasma Display PanelVDS200 Vl Lead-FreeVDS (Avalanche) min.260 VRDS(ON) max @ 10V m54BenefitsTJ max175 Cl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Inc

 ..2. Size:583K  infineon
irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf pdf_icon

IRFSL38N20DPBF

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 VRDS(on) max @ 10V 54 mBenefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D

 3.1. Size:256K  inchange semiconductor
irfsl38n20d.pdf pdf_icon

IRFSL38N20DPBF

Isc N-Channel MOSFET Transistor IRFS38N20DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 2

 7.1. Size:564K  international rectifier
irfb3806pbf irfs3806pbf irfsl3806pbf.pdf pdf_icon

IRFSL38N20DPBF

PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C

Datasheet: IRFSL31N20DPBF , IRFSL3206PBF , IRFSL3207 , IRFSL3207ZPBF , IRFSL3306PBF , IRFSL3307ZPBF , IRFSL3607PBF , IRFSL3806PBF , IRF3205 , IRFSL4010PBF , IRFSL4020PBF , IRFSL4115PBF , IRFSL4127PBF , IRFSL4227PBF , IRFSL4228PBF , IRFSL4229PBF , IRFSL4310PBF .

History: AP9120GH | KI1400DL

Keywords - IRFSL38N20DPBF MOSFET datasheet

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