All MOSFET. IRFSL38N20DPBF Datasheet

 

IRFSL38N20DPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFSL38N20DPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: TO-262

 IRFSL38N20DPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFSL38N20DPBF Datasheet (PDF)

 ..1. Size:715K  international rectifier
 irfsl38n20dpbf.pdf

IRFSL38N20DPBF IRFSL38N20DPBF

PD - 97001APROVISIONALIRFB38N20DPbF IRFS38N20DPbFSMPS MOSFET IRFSL38N20DPbFHEXFET Power MOSFETApplicationsl High frequency DC-DC converters Key Parametersl Plasma Display PanelVDS200 Vl Lead-FreeVDS (Avalanche) min.260 VRDS(ON) max @ 10V m54BenefitsTJ max175 Cl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Inc

 ..2. Size:583K  infineon
 irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf

IRFSL38N20DPBF IRFSL38N20DPBF

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 VRDS(on) max @ 10V 54 mBenefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D

 3.1. Size:256K  inchange semiconductor
 irfsl38n20d.pdf

IRFSL38N20DPBF IRFSL38N20DPBF

Isc N-Channel MOSFET Transistor IRFS38N20DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 2

 7.1. Size:564K  international rectifier
 irfb3806pbf irfs3806pbf irfsl3806pbf.pdf

IRFSL38N20DPBF IRFSL38N20DPBF

PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C

 7.2. Size:564K  infineon
 irfb3806pbf irfs3806pbf irfsl3806pbf.pdf

IRFSL38N20DPBF IRFSL38N20DPBF

PD - 97310IRFB3806PbFIRFS3806PbFApplicationsIRFSL3806PbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully C

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N6902JANTX

 

 
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