All MOSFET. IRFSL4229PBF Datasheet

 

IRFSL4229PBF Datasheet and Replacement


   Type Designator: IRFSL4229PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: TO-262
 

 IRFSL4229PBF substitution

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IRFSL4229PBF Datasheet (PDF)

 ..1. Size:275K  international rectifier
irfsl4229pbf.pdf pdf_icon

IRFSL4229PBF

PD - 96285IRFSL4229PbFFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Low QG for Fast Responsel High Repetitive Peak Current Capability forVDS (Avalanche) typ.300 V Reliable OperationRDS(ON) typ. @ 10V m42l Short Fall & Rise Times for Fast SwitchingIRP max @ TC= 100C91 Al175C Operating Junction Temperature forTJ max175 C Improved Ru

 6.1. Size:371K  international rectifier
irfs4228pbf irfsl4228pbf.pdf pdf_icon

IRFSL4229PBF

PD - 97231AIRFS4228PbFPDP SWITCHIRFSL4228PbFFeaturesl Advanced Process Technology Key Parametersl Key Parameters Optimized for PDP VDS min150 V Sustain, Energy Recovery and PassVDS (Avalanche) typ.180 V Switch ApplicationsRDS(ON) typ. @ 10V m12l Low EPULSE Rating to Reduce PowerIRP max @ TC= 100C170 A Dissipation in PDP Sustain, EnergyTJ max175 C Reco

 6.2. Size:357K  international rectifier
irfs4227pbf irfsl4227pbf.pdf pdf_icon

IRFSL4229PBF

PD - 96131AIRFS4227PbFPDP SWITCHIRFSL4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch

 6.3. Size:269K  inchange semiconductor
irfsl4227.pdf pdf_icon

IRFSL4229PBF

isc N-Channel MOSFET Transistor IRFSL4227FEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Vo

Datasheet: IRFSL3806PBF , IRFSL38N20DPBF , IRFSL4010PBF , IRFSL4020PBF , IRFSL4115PBF , IRFSL4127PBF , IRFSL4227PBF , IRFSL4228PBF , IRF640 , IRFSL4310PBF , IRFSL4310ZPBF , IRFSL4321PBF , IRFSL4410PBF , IRFSL4410ZPBF , IRFSL4510PBF , IRFSL4610PBF , IRFSL4615PBF .

History: AFP3459 | P2610BT | DMN3035LWN | IRF7779L2TR1PBF | AP65SL045AFWL | IPB34CN10N | FQD2N50TF

Keywords - IRFSL4229PBF MOSFET datasheet

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