All MOSFET. IXFM35N30 Datasheet

 

IXFM35N30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFM35N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 177 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO204

 IXFM35N30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFM35N30 Datasheet (PDF)

 ..1. Size:168K  ixys
 ixfh35n30 ixfh40n30 ixfm35n30 ixfm40n30.pdf

IXFM35N30 IXFM35N30

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 35 N30 300 V 35 A 100 mWPower MOSFETsIXFH 40 N30 300 V 40 A 85 mWIXFM 40 N30 300 V 40 A 88 mWN-Channel Enhancement Modetrr 200 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 V(TAB)VGS Continuous 20 VVGSM Trans

Datasheet: IXFM13N50 , IXFM13N80 , IXFM14N80 , IXFM15N60 , IXFM15N80 , IXFM20N60 , IXFM21N50 , IXFM24N50 , AO3400 , IXFM40N30 , IXFM42N20 , IXFM50N20 , IXFM67N10 , IXFM6N100 , IXFM6N90 , IXFM75N10 , IXFM7N80 .

 

 
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