IXFM35N30 PDF and Equivalents Search

 

IXFM35N30 Specs and Replacement

Type Designator: IXFM35N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 745 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO204

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IXFM35N30 datasheet

 ..1. Size:168K  ixys
 ixfh35n30 ixfh40n30 ixfm35n30 ixfm40n30.pdf pdf_icon

IXFM35N30

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 35 N30 300 V 35 A 100 mW Power MOSFETs IXFH 40 N30 300 V 40 A 85 mW IXFM 40 N30 300 V 40 A 88 mW N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V (TAB) VGS Continuous 20 V VGSM Trans... See More ⇒

Detailed specifications: IXFM13N50, IXFM13N80, IXFM14N80, IXFM15N60, IXFM15N80, IXFM20N60, IXFM21N50, IXFM24N50, AO3407, IXFM40N30, IXFM42N20, IXFM50N20, IXFM67N10, IXFM6N100, IXFM6N90, IXFM75N10, IXFM7N80

Keywords - IXFM35N30 MOSFET specs

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