IRFU3910PBF MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRFU3910PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO-251

IRFU3910PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFU3910PBF Datasheet (PDF)

..1. Size:392K international rectifier
irfr3910pbf irfu3910pbf.pdf

PD - 95079AIRFR3910PbFIRFU3910PbF Lead-Freewww.irf.com 11/7/05IRFR/U3910PbF2 www.irf.comIRFR/U3910PbFwww.irf.com 3IRFR/U3910PbF4 www.irf.comIRFR/U3910PbFwww.irf.com 5IRFR/U3910PbF6 www.irf.comIRFR/U3910PbFwww.irf.com 7IRFR/U3910PbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Informat

..2. Size:392K infineon
irfr3910pbf irfu3910pbf.pdf

5.1. Size:841K cn vbsemi
irfu3910p.pdf

IRFU3910Pwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

6.1. Size:261K inchange semiconductor
irfu3910.pdf

isc N-Channel MOSFET Transistor IRFU3910FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

7.1. Size:225K international rectifier
irfr3911pbf irfu3911pbf.pdf

PD - 95373AIRFR3911PbFSMPS MOSFET IRFU3911PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 0.115 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APT6029BFLL | IPP80N08S2-07 | MTH13N45

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IRFU3910PBF MOSFET. Datasheet pdf. Equivalent

IRFU3910PBF Datasheet (PDF)

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