All MOSFET. 2SJ517 Datasheet

 

2SJ517 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ517

SMD Transistor Code: YY

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 320 pF

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: UPAK

2SJ517 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ517 Datasheet (PDF)

1.1. rej03g0874 2sj517ds.pdf Size:92K _renesas

2SJ517
2SJ517

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.1. 2sj512.pdf Size:454K _toshiba

2SJ517
2SJ517

2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ512 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 1.0 ? (typ.) High forward transfer admittance : |Y | = 3.7 S (typ.) fs Low leakage current : I = -100 µA (max) (V = -250 V) DSS DS Enhancement-mode : Vth = -1.5~-3.

5.2. 2sj516.pdf Size:411K _toshiba

2SJ517
2SJ517

2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (?-MOSV) 2SJ516 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.6 ? (typ.) High forward transfer admittance : |Y | = 5.3 S (typ.) fs Low leakage current : I = -100 µA (max) (V = -250 V) DSS DS Enhancement-mode : Vth = -1.5~-3.5 V

 5.3. 2sj511.pdf Size:416K _toshiba

2SJ517
2SJ517

2SJ511 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ511 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.32 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 1.4 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -30 V) DS Enhancement

5.4. 2sj518.pdf Size:83K _renesas

2SJ517
2SJ517

2SJ518 Silicon P Channel MOS FET REJ03G0875-0400 (Previous: ADE-208-580B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.35 ? typ. (at VGS = 10 V, ID = 1 A) Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PLZZ0004CA-A R (Package name: UPAK ) D 1 2 1. Gate

 5.5. rej03g0875 2sj518ds.pdf Size:96K _renesas

2SJ517
2SJ517

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Datasheet: 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 , IRFP150N , 2SJ518 , 2SJ526 , 2SJ527 , 2SJ528 , 2SJ529 , 2SJ530 , 2SJ531 , 2SJ532 .

 
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