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2SJ517 Specs and Replacement


   Type Designator: 2SJ517
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: UPAK
 

 2SJ517 substitution

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2SJ517 Specs

 0.1. Size:92K  renesas
rej03g0874 2sj517ds.pdf pdf_icon

2SJ517

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.1. Size:416K  toshiba
2sj511.pdf pdf_icon

2SJ517

2SJ511 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ511 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.32 (typ.) DS (ON) High forward transfer admittance Y = 1.4 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -30 V) DS Enhancem... See More ⇒

 9.2. Size:411K  toshiba
2sj516.pdf pdf_icon

2SJ517

2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ516 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.6 (typ.) High forward transfer admittance Y = 5.3 S (typ.) fs Low leakage current I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode Vth = -1.5 -3.... See More ⇒

 9.3. Size:454K  toshiba
2sj512.pdf pdf_icon

2SJ517

2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ512 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Y = 3.7 S (typ.) fs Low leakage current I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode Vth = -1.5 ... See More ⇒

Detailed specifications: 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 , 75N75 , 2SJ518 , 2SJ526 , 2SJ527 , 2SJ528 , 2SJ529 , 2SJ530 , 2SJ531 , 2SJ532 .

Keywords - 2SJ517 MOSFET specs

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