To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ511 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ511 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.32 (typ.) DS (ON) High forward transfer admittance : |Y | = 1.4 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -30 V) DS Enhancem

2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ516 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.6 (typ.) High forward transfer admittance : |Y | = 5.3 S (typ.) fs Low leakage current : I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode : Vth = -1.5~-3.

2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ512 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 1.0 (typ.) High forward transfer admittance : |Y | = 3.7 S (typ.) fs Low leakage current : I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode : Vth = -1.5~

2SJ518 Silicon P Channel MOS FET REJ03G0875-0400 (Previous: ADE-208-580B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.35 typ. (at VGS = 10 V, ID = 1 A) Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PLZZ0004CA-AR(Package name: UPAK )

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ518www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.058 at VGS = - 10 V - 6.5APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 5.5 Load SwitchSDGDG D SP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Lim