All MOSFET. STC4614 Datasheet

 

STC4614 Datasheet and Replacement


   Type Designator: STC4614
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.1 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP-8
      - MOSFET Cross-Reference Search

 

STC4614 Datasheet (PDF)

 ..1. Size:1529K  stansontech
 stc4614.pdf pdf_icon

STC4614

STC4614 N&P Pair Enhancement Mode MOSFET 10.0A / -10.0A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

 9.1. Size:888K  stansontech
 stc4606.pdf pdf_icon

STC4614

STC4606 N&P Pair Enhancement Mode MOSFET 6.0A / -6.0A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - STC4614 MOSFET datasheet

 STC4614 cross reference
 STC4614 equivalent finder
 STC4614 lookup
 STC4614 substitution
 STC4614 replacement

 

 
Back to Top

 


 
.