STC6602 MOSFET Datasheet: NP-Ch, 30V, 2.8A. Full specification with pinout and replacement list

STC6602 Specs and Replacement

Type Designator: STC6602

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TSOP-6

STC6602 substitution

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STC6602 datasheet

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STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as not... See More ⇒

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STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application ... See More ⇒

Detailed specifications: IRFU5305PBF, STC4516, STC4539, STC4545, STC4567, STC4606, STC4614, STC6332, IRFP460, STC6614, STD100N03LT4, STD100N10F7, STD100NH02LT4, STD100NH03LT4, STD105N10F7AG, STD10N60M2, STD10NF10-1