STD10NF30
MOSFET. Datasheet pdf. Equivalent
Type Designator: STD10NF30
Marking Code: 10NF30
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 103
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 9.5
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.33
Ohm
Package:
DPAK
STD10NF30
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD10NF30
Datasheet (PDF)
..1. Size:868K st
std10nf30.pdf
STD10NF30Automotive-grade N-channel 300 V, 10 A, 0.28 typ., MESH OVERLAY Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. IDSTD10NF30 300 V 0.33 10 A TAB Designed for automotive applications and 3AEC-Q101 qualified1 Gate charge minimizedDPAK Very low intrinsic capacitancesApplications Switching appli
7.1. Size:457K st
std10nf10-1 std10nf10t4 std10nf10.pdf
STD10NF10STD10NF10-1N-channel 100V - 0.115 - 13A - DPAK - IPAKLow gate charge STripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD10NF10 100V
7.2. Size:302K st
std10nf06l.pdf
STD10NF06LN-CHANNEL 60V - 0.1 - 10A DPAKSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD10NF06L 60V
7.3. Size:849K st
std10nf10t4.pdf
STD10NF10T4 N-channel 100 V, 0.115 typ., 13 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD10NF10T4 100 V 0.130 13 A Exceptional dv/dt capability Application oriented characterization Applications Switching applications Figure 1: Internal schematic diagram Description D(2, TAB
7.4. Size:1487K cn vbsemi
std10nf06.pdf
STD10NF06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters
7.5. Size:905K cn vbsemi
std10nf10t4.pdf
STD10NF10T4www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI
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