STD10P6F6 Specs and Replacement
Type Designator: STD10P6F6
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.3 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: DPAK
STD10P6F6 substitution
- MOSFET ⓘ Cross-Reference Search
STD10P6F6 datasheet
std10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID 3 STD10P6F6 1 3 STF10P6F6 2 DPAK -60 V 0.16 -10 A 1 STP10P6F6 TO-220FP STU10P6F6 TAB TAB Very low on-resistance 3 Very low gate char... See More ⇒
std10p6f6 stf10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel 60 V, 0.13 typ., 10 A STripFET VI DeepGATE Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDSS RDS(on) max ID 3 1 STD10P6F6 3 2 DPAK STF10P6F6 1 60 V 0.16 10 A TO-220FP STP10P6F6 TAB STU10P6F6 TAB RDS(on) * Qg industry benchmark 3 2 ... See More ⇒
Detailed specifications: STD100N10F7, STD100NH02LT4, STD100NH03LT4, STD105N10F7AG, STD10N60M2, STD10NF10-1, STD10NF10T4, STD10NF30, 10N60, STD10PF06-1, STD10PF06T4, STD110N02R, STD110N02RT4G, STD110N8F6, STD110NH02LT4, STD11N50M2, STD11N65M2
Keywords - STD10P6F6 MOSFET specs
STD10P6F6 cross reference
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STD10P6F6 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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