STD10PF06-1 Specs and Replacement
Type Designator: STD10PF06-1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: DPAK
STD10PF06-1 substitution
STD10PF06-1 datasheet
std10pf06t4.pdf
STD10PF06T4 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S... See More ⇒
std10p6f6 stf10p6f6 stp10p6f6 stu10p6f6.pdf
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID 3 STD10P6F6 1 3 STF10P6F6 2 DPAK -60 V 0.16 -10 A 1 STP10P6F6 TO-220FP STU10P6F6 TAB TAB Very low on-resistance 3 Very low gate char... See More ⇒
Detailed specifications: STD100NH02LT4 , STD100NH03LT4 , STD105N10F7AG , STD10N60M2 , STD10NF10-1 , STD10NF10T4 , STD10NF30 , STD10P6F6 , AON6414A , STD10PF06T4 , STD110N02R , STD110N02RT4G , STD110N8F6 , STD110NH02LT4 , STD11N50M2 , STD11N65M2 , STD11N65M5 .
History: FDC3612
Keywords - STD10PF06-1 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FDC3612
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