All MOSFET. STD11N50M2 Datasheet

 

STD11N50M2 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD11N50M2

Marking Code: 11N50M2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 85 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 26 pF

Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Package: DPAK

STD11N50M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD11N50M2 Datasheet (PDF)

1.1. std11n50m2 stf11n50m2 stf11n50m2.pdf Size:986K _st

STD11N50M2
STD11N50M2

STD11N50M2, STF11N50M2 N-channel 500 V, 0.45 Ω typ,8 A, MDmesh II Plus™ low Qg Power MOSFETs in DPAK and TO-220FP packages Datasheet - preliminary data Features Order codes VDS @ TJmax RDS(on) max ID STD11N50M2 550 V 0.53 Ω 8 A STF11N50M2 TAB • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation 3 DPAK 2 • Low gate input resistance 1 •

4.1. std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf Size:750K _st

STD11N50M2
STD11N50M2

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID 3 3 STD11NM60ND 10 A 1 2 1 STF11NM60ND 10 A(1) DPAK I²PAK STI11NM60ND 650 V < 0.45 Ω 10 A 3 2 STP11NM60ND 10 A 1 STU11NM60ND 10 A IPAK 1. Limited only by maximum temperature allo

4.2. stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf Size:632K _st

STD11N50M2
STD11N50M2

STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 Ω 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 Ω 10 A STD11NM60N 650 V 0.45 Ω 10 A STD11NM60N-1 650 V 0.45 Ω 10 A STF11NM60N 650 V 0.45 Ω 10 A(1) STP11NM60N 650 V 0.45 Ω

 4.3. stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf Size:635K _st

STD11N50M2
STD11N50M2

STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 Ω 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 Ω 10 A STD11NM60N 650 V 0.45 Ω 10 A STD11NM60N-1 650 V 0.45 Ω 10 A STF11NM60N 650 V 0.45 Ω 10 A(1) STP11NM60N 650 V 0.45 Ω

4.4. std11nm65n stf11nm65n stf11nm65n stp11nm65n.pdf Size:1258K _st

STD11N50M2
STD11N50M2

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages Datasheet - production data Features TAB VDSS @ RDS(on) 3 Order codes ID 1 TJmax max 3 DPAK 2 1 STD11NM65N STF11NM65N TO-220FP 710 V < 0.455 Ω 11 A STFI11NM65N TAB STP11NM65N • 100% avalanche tested 3 1 2 2

 4.5. std11n65m2 stp11n65m2 stu11n65m2.pdf Size:1172K _st

STD11N50M2
STD11N50M2

STD11N65M2, STP11N65M2, STU11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB TAB 3 Order codes VDS RDS(on) max ID 1 STD11N65M2 DPAK 3 STP11N65M2 650 V 0.67 Ω 7 A 2 1 STU11N65M2 TO-220 TAB • Extremely low gate charge • Lower RDS(on) x area vs previous generation

4.6. stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf Size:632K _st

STD11N50M2
STD11N50M2

STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 Ω 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 Ω 10 A STD11NM60N 650 V 0.45 Ω 10 A STD11NM60N-1 650 V 0.45 Ω 10 A STF11NM60N 650 V 0.45 Ω 10 A(1) STP11NM60N 650 V 0.45 Ω

4.7. std11n65m5.pdf Size:717K _st

STD11N50M2
STD11N50M2

STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 N-channel 650 V, 0.43 Ω, 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 packages Preliminary data Features TAB TAB 2 2 3 VDSS @ RDS(on) 3 Order code ID 1 1 TJmax max DPAK D2PAK STB11N65M5 STD11N65M5 TAB 710 V < 0.48 Ω 9 A STF11N65M5 STP11N65M5 3 3 2 2 1 ■ Worldwide best RDS(on) * area 1 TO-220 TO-

4.8. std11nm50n stf11nm50n stp11nm50n.pdf Size:678K _st

STD11N50M2
STD11N50M2

STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 Ω, 9 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220 Features RDS(on) Type VDSS @TJmax ID 3 max 1 3 STD11NM50N 2 DPAK 1 STF11NM50N 550 V < 0.47 Ω 9 A STP11NM50N TO-220 ■ 100% avalanche tested 3 2 ■ Low input capacitances and gate charge 1 TO-220FP ■ Low gate input resistance Application ■ Swi

4.9. std11nm50n.pdf Size:262K _inchange_semiconductor

STD11N50M2
STD11N50M2

Isc N-Channel MOSFET Transistor STD11NM50N ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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