STD11N50M2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STD11N50M2
Маркировка: 11N50M2
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 85 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 12 nC
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 26 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.53 Ohm
Тип корпуса: DPAK
Аналог (замена) для STD11N50M2
STD11N50M2 Datasheet (PDF)
std11n50m2 stf11n50m2 stf11n50m2.pdf
STD11N50M2, STF11N50M2N-channel 500 V, 0.45 typ,8 A, MDmesh II Plus low Qg Power MOSFETs in DPAK and TO-220FP packagesDatasheet - preliminary dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTD11N50M2550 V 0.53 8 ASTF11N50M2TAB Extremely low gate charge31 Lower RDS(on) x area vs previous generation3DPAK2 Low gate input resistance1
std11n50m2 stf11n50m2.pdf
STD11N50M2, STF11N50M2DatasheetN-channel 500 V, 0.45 typ., 8 A MDmesh M2 Power MOSFETs in DPAK and TO-220FP packagesFeaturesVDS @ TJmax RDS(on)max. IDOrder code PackageTABSTD11N50M2 DPAK3550 V 0.53 8 A2STF11N50M2 TO-220FP1321 Extremely low gate chargeDPAK TO-220FP Excellent output capacitance (COSS) profile 100% avalanche tested Zen
stb11n65m5 std11n65m5 stf11n65m5 stp11n65m5.pdf
STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5DatasheetN-channel 650 V, 0.43 typ., 9 A MDmesh M5 Power MOSFETs in a DPAK, DPAK, TO-220FP and TO-220 packages FeaturesTABTAB32 VDS @311RDS(on)max. IDOrder codeDPAK2D PAKTjmax.TABSTB11N65M5STD11N65M5710 V 0.48 9 A3231 STF11N65M521TO-220TO-220FPSTP11N65M5D(2, TAB) Extremel
std11nm65n stf11nm65n stf11nm65n stp11nm65n.pdf
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V
std11n65m2 stp11n65m2 stu11n65m2.pdf
STD11N65M2, STP11N65M2, STU11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABTAB3Order codes VDS RDS(on) max ID1STD11N65M2DPAK3STP11N65M2 650 V 0.67 7 A21STU11N65M2TO-220TAB Extremely low gate charge Lower RDS(on) x area vs previous generation
stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf
STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf
STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
std11nm65n stf11nm65n stfi11nm65n stp11nm65n.pdf
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V
stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf
STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45
std11nm50n stf11nm50n stp11nm50n.pdf
STD11NM50NSTF11NM50N, STP11NM50NN-channel 500 V, 0.4 , 9 A MDmesh II Power MOSFETin DPAK, TO-220FP and TO-220FeaturesRDS(on) Type VDSS @TJmax ID3max13STD11NM50N2DPAK1STF11NM50N 550 V
std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf
STD11NM60ND, STF/I11NM60NDSTP11NM60ND, STU11NM60NDN-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFETI2PAK, TO-220, TO-220FP, IPAK, DPAKFeatures Order codes VDSS (@Tjmax) RDS(on) max ID33STD11NM60ND 10 A 1 21STF11NM60ND 10 A(1)DPAKIPAKSTI11NM60ND 650 V
std11n65m5.pdf
STB11N65M5, STD11N65M5STF11N65M5, STP11N65M5N-channel 650 V, 0.43 , 9 A MDmesh V Power MOSFETin D2PAK, DPAK, TO-220FP and TO-220 packagesPreliminary dataFeaturesTABTAB2 2 3VDSS @ RDS(on) 3Order code ID11TJmax maxDPAKD2PAKSTB11N65M5STD11N65M5 TAB710 V
std11nm50n.pdf
Isc N-Channel MOSFET Transistor STD11NM50NFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
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