All MOSFET. IXFM75N10 Datasheet

 

IXFM75N10 Datasheet and Replacement


   Type Designator: IXFM75N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 180 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO204
 

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IXFM75N10 Datasheet (PDF)

 ..1. Size:94K  ixys
 ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf pdf_icon

IXFM75N10

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 67 N10 100 V 67 A 25 mWPower MOSFETsIXFH/IXFM 75 N10 100 V 75 A 20 mWtrr 200 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25

 9.1. Size:76K  ixys
 ixfh7n80 ixfm7n80.pdf pdf_icon

IXFM75N10

HiPerFETTM IXFH 7 N80 VDSS = 800 VPower MOSFETs IXFM 7 N80 ID (cont) = 7 ARDS(on) = 1.4 WN-Channel Enhancement Modetrr = 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C7 ATO-204 AA (IXFM

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