IXFM75N10 PDF and Equivalents Search

 

IXFM75N10 Specs and Replacement

Type Designator: IXFM75N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO204

IXFM75N10 substitution

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IXFM75N10 datasheet

 ..1. Size:94K  ixys
 ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf pdf_icon

IXFM75N10

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 ixfh7n80 ixfm7n80.pdf pdf_icon

IXFM75N10

HiPerFETTM IXFH 7 N80 VDSS = 800 V Power MOSFETs IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W N-Channel Enhancement Mode trr = 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C7 A TO-204 AA (IXFM... See More ⇒

Detailed specifications: IXFM24N50, IXFM35N30, IXFM40N30, IXFM42N20, IXFM50N20, IXFM67N10, IXFM6N100, IXFM6N90, 2N60, IXFM7N80, IXFN100N25, IXFN106N20, IXFN110N20, IXFN120N20, IXFN130N30, IXFN150N15, IXFN170N10

Keywords - IXFM75N10 MOSFET specs

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