All MOSFET. STD19NF20 Datasheet

 

STD19NF20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD19NF20
   Marking Code: 19NF20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: DPAK

 STD19NF20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD19NF20 Datasheet (PDF)

 ..1. Size:805K  st
 stb19nf20 std19nf20 stf19nf20 stp19nf20.pdf

STD19NF20 STD19NF20

STB19NF20, STD19NF20STF19NF20, STP19NF20DatasheetN-channel 200 V, 0.11 , 15 A, MESH OVERLAY Power MOSFETs in D2PAK, DPAK, TO220FP and TO-220 packagesFeaturesTABTAB32 VDS RDS(on) max. IDType Package311DPAK2D PAKSTB19NF20D2PAKTABSTD19NF20 DPAK200 V 0.16 15 ASTF19NF20 TO-220FP3231STP19NF20 TO-22021TO-220TO-220FP Extremel

 ..2. Size:1046K  st
 std19nf20.pdf

STD19NF20 STD19NF20

STB19NF20, STD19NF20, STF19NF20, STP19NF20N-channel 200 V, 0.11 typ., 15 A MESH OVERLAY Power MOSFET in DPAK, DPAK, TO-220FP and TO-220 packagesDatasheet production dataFeaturesTABTABRDS(on) Type VDS ID PTOTmax.33STB19NF20 200 V 0.16 15 A 90 W11DPAK DPAKSTD19NF20 200 V 0.16 15 A 90 WTABSTF19NF20 200 V 0.16 15 A 25 WSTP19NF20 200

 8.1. Size:308K  st
 std19ne06l.pdf

STD19NF20 STD19NF20

STD19NE06LN-CHANNEL 60V - 0.038 - 19A IPAK/DPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD19NE06L 60 V

 8.2. Size:295K  st
 std19ne06.pdf

STD19NF20 STD19NF20

STD19NE06N-CHANNEL 60V - 0.042 - 19A IPAK/DPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD19NE06 60 V

 9.1. Size:855K  samhop
 stu1955nl std1955nl.pdf

STD19NF20 STD19NF20

S T U/D1955NLS amHop Microelectronics C orp. Arp,12 2005 ver1.2N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S IDR DS (ON) ( m W ) MaxR ugged and reliable.55 @ V G S = 10V55V 10ATO-252 and TO-251 Package.80 @ V G S = 4.5VDDGSGS TU S E R IE S S TD S E R IE STO-252AA

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HUF76423D3

 

 
Back to Top