All MOSFET. STD1HNC60T4 Datasheet

 

STD1HNC60T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD1HNC60T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.3 nC
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: DPAK

 STD1HNC60T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD1HNC60T4 Datasheet (PDF)

 ..1. Size:190K  st
std1hnc60t4.pdf

STD1HNC60T4
STD1HNC60T4

STD1HNC60N-CHANNEL 600V - 4 - 2A - IPAK/DPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1HNC60 600 V

 5.1. Size:268K  st
std1hnc60.pdf

STD1HNC60T4
STD1HNC60T4

STD1HNC60N-CHANNEL 600V - 4 - 2A - IPAK/DPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1HNC60 600 V

 8.1. Size:1441K  st
std1hn60k3 stu1hn60k3.pdf

STD1HNC60T4
STD1HNC60T4

STD1HN60K3, STU1HN60K3N-channel 600 V, 6.7 typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packagesDatasheet - production dataFeaturesRDS(on) Order codes VDS max ID PTOTSTD1HN60K3TABTAB600 V 8 1.2 A 27 WSTU1HN60K333121 100% avalanche testedDPAKIPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capac

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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