STD1HNC60T4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD1HNC60T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.3 nC
trⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: DPAK
STD1HNC60T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD1HNC60T4 Datasheet (PDF)
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STD1HNC60N-CHANNEL 600V - 4 - 2A - IPAK/DPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1HNC60 600 V
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STD1HN60K3, STU1HN60K3N-channel 600 V, 6.7 typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packagesDatasheet - production dataFeaturesRDS(on) Order codes VDS max ID PTOTSTD1HN60K3TABTAB600 V 8 1.2 A 27 WSTU1HN60K333121 100% avalanche testedDPAKIPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capac
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