STD1NK60-1 MOSFET Datasheet: N-Ch, 600V, 1A. Full specification with pinout and replacement list

STD1NK60-1 Specs and Replacement

Type Designator: STD1NK60-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 23.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: IPAK

STD1NK60-1 substitution

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STD1NK60-1 datasheet

..1. Size:424K st
std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf pdf_icon

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STD1NK60 600 V ... See More ⇒

..2. Size:427K st
std1nk60-1 std1nk60t4 std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf pdf_icon

6.1. Size:1176K st
std1nk60t4.pdf pdf_icon

STD1NK60T4 N-channel 600 V, 7.3 typ., 1 A SuperMESH Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD1NK60T4 600 V 8.5 1 A 30 W Extremely high dv/dt capability ESD improved capability 100% avalanche tested Gate charge minimized Figure 1 Internal schematic diagram Applications L... See More ⇒

8.1. Size:625K st
std1nk80z-1 std1nk80zt4 stq1nk80zr-ap.pdf pdf_icon

STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw 2 STQ1NK80ZR-AP 800 V ... See More ⇒