All MOSFET. STD24N06LT4G Datasheet

 

STD24N06LT4G MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD24N06LT4G
   Marking Code: 24N6L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 97 nS
   Cossⓘ - Output Capacitance: 258 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: DPAK

 STD24N06LT4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD24N06LT4G Datasheet (PDF)

 ..1. Size:112K  onsemi
 std24n06l std24n06lt4g.pdf

STD24N06LT4G STD24N06LT4G

NTD24N06L, STD24N06LPower MOSFET24 A, 60 V, Logic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits. http://onsemi.comFeatures24 AMPERES, 60 VOLTS S Prefix for Automotive and Other Applications Requiring UniqueRDS(on) = 0.036 W (Typ)Site and Control Change Requirements;

 9.1. Size:104K  samhop
 stu2455pls std2455pls.pdf

STD24N06LT4G STD24N06LT4G

S TU/D2455P LSS amHop Microelectronics C orp.Dec 30, 2005P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESR DS (ON) ( m ) MaxVDS S ID S uper high dense cell design for low R DS (ON).R ugged and reliable.42 @ VGS =-10V-55V -24TO-252 and TO-251 Package.55 @ VGS = -4.5VDDGGSSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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