STD25NF20
MOSFET. Datasheet pdf. Equivalent
Type Designator: STD25NF20
Marking Code: 25NF20
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 28
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 197
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125
Ohm
Package:
DPAK
STD25NF20
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD25NF20
Datasheet (PDF)
..1. Size:842K st
std25nf20.pdf 
STD25NF20Automotive-grade N-channel 200 V, 0.10 typ., 18 A STripFET Power MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDS max ID PTOTSTD25NF20 200 V 0.125 18 A 110 WTAB Designed for automotive applications and 31 AEC-Q101 qualifiedDPAK Extremely low gate charge Exceptional dv/dt capability Low gate input resis
7.1. Size:433K st
std25nf10l.pdf
STD25NF10LN-channel 100V - 0.030 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10L 100V
7.2. Size:650K st
std25nf10la.pdf
STD25NF10LAN-channel 100 V, 0.030 , 25 A DPAKSTripFET II Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTD25NF10LA 100 V
7.3. Size:426K st
std25nf10l std25nf10lt4.pdf
STD25NF10LN-channel 100V - 0.030 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10L 100V
7.4. Size:402K st
std25nf10.pdf
STD25NF10N-channel 100V - 0.033 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10 100V
7.5. Size:395K st
std25nf10t4.pdf
STD25NF10N-channel 100V - 0.033 - 25A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD25NF10 100V
7.6. Size:285K inchange semiconductor
std25nf10la.pdf
isc N-Channel MOSFET Transistor STD25NF10LAFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 35m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
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