All MOSFET. STD26P3LLH6 Datasheet

 

STD26P3LLH6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD26P3LLH6
   Marking Code: 26P3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: DPAK

 STD26P3LLH6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD26P3LLH6 Datasheet (PDF)

 ..1. Size:982K  st
 std26p3llh6.pdf

STD26P3LLH6 STD26P3LLH6

STD26P3LLH6P-channel 30 V, 0.024 typ., 12 A, STripFET VI DeepGATEPower MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDSS max ID PTOTTABSTD26P3LLH6 30 V 0.030 (1) 12 A 40 W321. @ VGS= 10 V1 RDS(on) * Qg industry benchmarkDPAK Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate input resis

 9.1. Size:391K  st
 std26nf10.pdf

STD26P3LLH6 STD26P3LLH6

STD26NF10N-channel 100V - 0.033 - 25A - DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD26NF10 100V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FQD10N20LTM

 

 
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