STD2N105K5 Datasheet and Replacement

   Type Designator: STD2N105K5
   Marking Code: 2N105K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: DPAK

STD2N105K5 substitution

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STD2N105K5 Datasheet (PDF)

..1. Size:1136K st
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STD2N105K5, STP2N105K5, STU2N105K5N-channel 1050 V, 6 typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTAB3Order codes VDS RDS(on) max ID PTOT1STD2N105K5DPAKSTP2N105K5 1050 V 8 1.5 A 60 WTABSTU2N105K5TAB Industrys lowest RDS(on) x area Industrys best figure of merit (FoM)33221

9.1. Size:407K 1
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9.3. Size:590K st
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STP2NK90Z - STD2NK90ZSTD2NK90Z-1N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAKZener-Protected SuperMESH MOSFETGeneral featuresVDSS Type RDS(on) ID PW(@Tjmax) 3312STD2NK90Z 900V

9.4. Size:598K st
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STP2NK90Z - STD2NK90ZSTD2NK90Z-1N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAKZener-Protected SuperMESH MOSFETGeneral featuresVDSS Type RDS(on) ID PW(@Tjmax) 3312STD2NK90Z 900V

9.5. Size:441K st
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9.6. Size:702K st
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STD2N62K3, STF2N62K3, STU2N62K3DatasheetN-channel 620 V, 2.9 typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packagesFeaturesVDS RDS(on)max. IDOrder code PackageSTD2N62K3 DPAKSTF2N62K3 620 V 3.6 2.2 A TO-220FPSTU2N62K3 IPAKD(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitanceG(1) Improved

9.7. Size:557K st
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STD2NK90Z-1, STD2NK90ZT4, STP2NK90ZDatasheetN-channel 900 V, 5 typ., 2.1 A SuperMESH Power MOSFETs in IPAK, DPAK and TO-220 packagesFeaturesTAB TAB32VDS RDS(on) max. IDOrder code Package132IPAK DPAK1STD2NK90Z-1 IPAKTAB STD2NK90ZT4 900 V 6.5 2.1 A DPAKSTP2NK90Z TO-220 Extremely high dv/dt capability3TO-220 21 100% avalanche tested Ga

9.8. Size:407K st
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9.9. Size:1626K st
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9.10. Size:442K st
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9.11. Size:542K st
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STF2NK60Z - STQ2NK60ZR-APSTP2NK60Z - STD2NK60Z-1N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAKZener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTF2NK60Z 600 V

9.12. Size:102K st
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9.13. Size:482K st
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9.14. Size:451K st
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9.15. Size:1284K st
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STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5N-channel 950 V, 4.2 typ., 2 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT31STD2N95K5 45 WDPAK3STF2N95K5 20 W21 950 V 5 2 ATABSTP2N95K5TO-220FP45 WSTU2N95K5TAB TO-220 worldwide best RD

9.16. Size:249K st
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STD2NC40-1N-CHANNEL 400V - 4.7 - 1.5A IPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD2NC40-1 400V

9.17. Size:391K st
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STD2NC45-1STQ1NC45N-CHANNEL 450V - 4.1 - 1.5 A IPAK / TO-92SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTD2NC45-1 450 V

9.18. Size:354K st
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STD2NM60STD2NM60-1N-CHANNEL 600V - 2.8 - 2A DPAK/IPAKZener-Protected MDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD2NM60 600V

9.19. Size:274K st
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STD2NB25N - CHANNEL 250V - 1.7 - 2A - IPAK/DPAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTD2NB25 250 V

9.20. Size:453K st
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9.21. Size:174K st
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STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3N-channel 620 V, 3 , 2.2 A SuperMESH3 Power MOSFET in DPAK, DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDSS max ID PTOT32311STB2N62K3TAB45 WIPAKDPAKSTD2N62K33TABSTF2N62K3 620 V

9.23. Size:1117K st
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STD2N62K3, STF2N62K3STP2N62K3, STU2N62K3N-channel 620 V, 3 , 2.2 A, DPAK, IPAK, TO-220, TO-220FPSuperMESH3 Power MOSFETFeaturesRDS(on) 3Type VDSS ID Pwmax1 32DPAK 1STD2N62K3 45 WIPAKSTF2N62K3 20 W620 V

9.24. Size:447K st
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9.25. Size:451K st
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9.26. Size:47K st
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9.27. Size:283K st
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9.28. Size:256K st
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STD2NC45-1N-channel 450 V, 4.1 , 1.5 A, IPAKSuperMESH Power MOSFETFeatures Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark321ApplicationIPAK Switching applicationsDescriptionThe SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerM

9.29. Size:474K st
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STD2NM60STD2NM60-1N-CHANNEL 600V - 2.8 - 2A DPAK/IPAKZener-Protected MDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD2NM60 600V

9.30. Size:98K st
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9.31. Size:853K cn vbsemi
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STD2NB60T4www.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS

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