STD2N105K5 - описание и поиск аналогов

STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB 3 Order codes VDS RDS(on) max ID PTOT 1 STD2N105K5 DPAK STP2N105K5 1050 V 8 1.5 A 60 W TAB STU2N105K5 TAB Industry s lowest RDS(on) x area Industry s best figure of merit (FoM) 3 3 2 2 1

STD2NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD2NA60 600 V

STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD2N50 500 V

STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) 3 3 1 2 STD2NK90Z 900V

STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) 3 3 1 2 STD2NK90Z 900V

STD2NK70Z STD2NK70Z-1 N-channel 700V - 6 - 1.6 A - DPAK/IPAK Zener protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID Pw STD2NK70Z 700V 7 1.6A 45W STD2NK70Z-1 700V 7 1.6A 45W 3 3 2 1 Extremely high dv/dt capability 1 ESD improved capability DPAK IPAK 100% avalanche tested New high voltage benchmark Gate charge minimized Des

STD2N62K3, STF2N62K3, STU2N62K3 Datasheet N-channel 620 V, 2.9 typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features VDS RDS(on)max. ID Order code Package STD2N62K3 DPAK STF2N62K3 620 V 3.6 2.2 A TO-220FP STU2N62K3 IPAK D(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance G(1) Improved

STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z Datasheet N-channel 900 V, 5 typ., 2.1 A SuperMESH Power MOSFETs in IPAK, DPAK and TO-220 packages Features TAB TAB 3 2 VDS RDS(on) max. ID Order code Package 1 3 2 IPAK DPAK 1 STD2NK90Z-1 IPAK TAB STD2NK90ZT4 900 V 6.5 2.1 A DPAK STP2NK90Z TO-220 Extremely high dv/dt capability 3 TO-220 2 1 100% avalanche tested Ga

STD2NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD2NA60 600 V

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 typ., 2 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD2N80K5 45 W DPAK 3 STF2N80K5 20 W 2 800 V 4.5 2 A 1 STP2N80K5 TAB 45 W TO-220FP STU2N80K5 TAB TO-220 worldwide best RDS

STD2NC50 STD2NC50-1 N-CHANNEL 500V - 3 - 2.2A DPAK/IPAK PowerMesh II MOSFET TYPE VDSS RDS(on) ID STD2NC50 500 V

STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STF2NK60Z 600 V

STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V R I DSS DS(on) D STD2NB60 600 V

STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8 - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID STD2NM60 600V

STD2NK70Z STD2NK70Z-1 N-channel 700V - 6 - 1.6 A - DPAK/IPAK Zener protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID Pw STD2NK70Z 700V 7 1.6A 45W STD2NK70Z-1 700V 7 1.6A 45W 3 3 2 1 Extremely high dv/dt capability 1 ESD improved capability DPAK IPAK 100% avalanche tested New high voltage benchmark Gate charge minimized Des

STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 N-channel 950 V, 4.2 typ., 2 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID PTOT 3 1 STD2N95K5 45 W DPAK 3 STF2N95K5 20 W 2 1 950 V 5 2 A TAB STP2N95K5 TO-220FP 45 W STU2N95K5 TAB TO-220 worldwide best RD

STD2NC40-1 N-CHANNEL 400V - 4.7 - 1.5A IPAK PowerMesh II MOSFET TYPE VDSS RDS(on) ID STD2NC40-1 400V

STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1 - 1.5 A IPAK / TO-92 SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STD2NC45-1 450 V

STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8 - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID STD2NM60 600V

STD2NB25 N - CHANNEL 250V - 1.7 - 2A - IPAK/DPAK PowerMESH MOSFET TYPE VDSS RDS(on) ID STD2NB25 250 V

STD2NK100Z STP2NK100Z - STU2NK100Z N-channel 1000 V, 6.25 , 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features RDS(on) VDSS ID PTOT Type max 3 STD2NK100Z 1000 V

STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD2N50 500 V

STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 , 2.2 A SuperMESH3 Power MOSFET in D PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data Features TAB RDS(on) Order codes VDSS max ID PTOT 3 2 3 1 1 STB2N62K3 TAB 45 W IPAK D PAK STD2N62K3 3 TAB STF2N62K3 620 V

STD2N62K3, STF2N62K3 STP2N62K3, STU2N62K3 N-channel 620 V, 3 , 2.2 A, DPAK, IPAK, TO-220, TO-220FP SuperMESH3 Power MOSFET Features RDS(on) 3 Type VDSS ID Pw max 1 3 2 DPAK 1 STD2N62K3 45 W IPAK STF2N62K3 20 W 620 V

STD2NC70Z STD2NC70Z-1 N-CHANNEL 700V - 4.1 - 2.3A DPAK/IPAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STD2NC70Z 700V

STD2NB50 STD2NB50-1 N-CHANNEL 500V - 5 - 1A DPAK / IPAK PowerMesh MOSFET TYPE VDSS RDS(on) ID STD2NB50 500V

STD2NB80-1 N - CHANNEL 800V - 4.6 - 1.9A - IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NB80-1 800V

STD2NC60 N-CHANNEL 600V - 3.3 - 2A DPAK / IPAK PowerMesh II MOSFET TYPE VDSS RDS(on) ID STD2NC60 600V

STD2NC45-1 N-channel 450 V, 4.1 , 1.5 A, IPAK SuperMESH Power MOSFET Features Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark 3 2 1 Application IPAK Switching applications Description The SuperMESH series is obtained through an extreme optimization of ST s well established strip-based PowerM

STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8 - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS(on) ID STD2NM60 600V

STD2NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NA50 500 V

STD2NB60T4 www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS