All MOSFET. STD2NK90ZT4 Datasheet

 

STD2NK90ZT4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD2NK90ZT4
   Marking Code: D2NK90Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 2.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.5 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: DPAK

 STD2NK90ZT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD2NK90ZT4 Datasheet (PDF)

 ..1. Size:590K  st
std2nk90zt4.pdf

STD2NK90ZT4
STD2NK90ZT4

STP2NK90Z - STD2NK90ZSTD2NK90Z-1N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAKZener-Protected SuperMESH MOSFETGeneral featuresVDSS Type RDS(on) ID PW(@Tjmax) 3312STD2NK90Z 900V

 ..2. Size:557K  st
std2nk90z-1 std2nk90zt4 stp2nk90z.pdf

STD2NK90ZT4
STD2NK90ZT4

STD2NK90Z-1, STD2NK90ZT4, STP2NK90ZDatasheetN-channel 900 V, 5 typ., 2.1 A SuperMESH Power MOSFETs in IPAK, DPAK and TO-220 packagesFeaturesTAB TAB32VDS RDS(on) max. IDOrder code Package132IPAK DPAK1STD2NK90Z-1 IPAKTAB STD2NK90ZT4 900 V 6.5 2.1 A DPAKSTP2NK90Z TO-220 Extremely high dv/dt capability3TO-220 21 100% avalanche tested Ga

 5.1. Size:598K  st
stp2nk90z std2nk90z std2nk90z-1.pdf

STD2NK90ZT4
STD2NK90ZT4

STP2NK90Z - STD2NK90ZSTD2NK90Z-1N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAKZener-Protected SuperMESH MOSFETGeneral featuresVDSS Type RDS(on) ID PW(@Tjmax) 3312STD2NK90Z 900V

 8.1. Size:441K  st
std2nk70z-1 std2nk70zt4.pdf

STD2NK90ZT4
STD2NK90ZT4

STD2NK70ZSTD2NK70Z-1N-channel 700V - 6 - 1.6 A - DPAK/IPAKZener protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTD2NK70Z 700V 7 1.6A 45WSTD2NK70Z-1 700V 7 1.6A 45W3321 Extremely high dv/dt capability1 ESD improved capabilityDPAKIPAK 100% avalanche tested New high voltage benchmark Gate charge minimizedDes

 8.2. Size:542K  st
stq2nk60zr-ap stp2nk60z stf2nk60z std2nk60z-1.pdf

STD2NK90ZT4
STD2NK90ZT4

STF2NK60Z - STQ2NK60ZR-APSTP2NK60Z - STD2NK60Z-1N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAKZener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTF2NK60Z 600 V

 8.3. Size:451K  st
std2nk70z std2nk70z-1.pdf

STD2NK90ZT4
STD2NK90ZT4

STD2NK70ZSTD2NK70Z-1N-channel 700V - 6 - 1.6 A - DPAK/IPAKZener protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTD2NK70Z 700V 7 1.6A 45WSTD2NK70Z-1 700V 7 1.6A 45W3321 Extremely high dv/dt capability1 ESD improved capabilityDPAKIPAK 100% avalanche tested New high voltage benchmark Gate charge minimizedDes

 8.4. Size:453K  st
std2nk100z stp2nk100z stu2nk100z.pdf

STD2NK90ZT4
STD2NK90ZT4

STD2NK100ZSTP2NK100Z - STU2NK100ZN-channel 1000 V, 6.25 , 1.85 A, TO-220, DPAK, IPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypemax3STD2NK100Z 1000 V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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