All MOSFET. STD50NH02L-1 Datasheet

 

STD50NH02L-1 Datasheet and Replacement


   Type Designator: STD50NH02L-1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: IPAK
      - MOSFET Cross-Reference Search

 

STD50NH02L-1 Datasheet (PDF)

 ..1. Size:533K  st
 std50nh02l-1 std50nh02lt4.pdf pdf_icon

STD50NH02L-1

STD50NH02LSTD50NH02L-1N-channel 24V - 0.0085 - 50A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD50NH02L-1 24V

 ..2. Size:538K  st
 std50nh02l std50nh02l-1.pdf pdf_icon

STD50NH02L-1

STD50NH02LSTD50NH02L-1N-channel 24V - 0.0085 - 50A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD50NH02L-1 24V

 4.1. Size:534K  st
 std50nh02l.pdf pdf_icon

STD50NH02L-1

STD50NH02LN-CHANNEL 24V - 0.0085 - 50A DPAK/IPAKSTripFET III POWER MOSFETTYPE VDSS RDS(on) IDSTD50NH02L 24 V

 8.1. Size:340K  st
 std50n03l std50n03l-1.pdf pdf_icon

STD50NH02L-1

STD50N03LSTD50N03L-1N-CHANNEL 30V - 9.2m - 40A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD50N03L 30V 10.5m 40ASTD50N03L-1 30V 10.5m 40A332 RDS(on)*Qg industrys benchmark 1 1 Conduction losses reducedDPAKIPAK Switching losses reduced Low threshold deviceDescriptionThis product utilizes the latest advan

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History: BSZ035N03LSG | SVF9N90F

Keywords - STD50NH02L-1 MOSFET datasheet

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