STD55NH2LLT4 Datasheet and Replacement
Type Designator: STD55NH2LLT4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 385 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: DPAK
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STD55NH2LLT4 Datasheet (PDF)
std55nh2llt4.pdf
STD55NH2LLSTD55NH2LL-1N-channel 24V - 0.010 - 40A - DPAK/IPAKUltra low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD55NH2LL-1 24V
std55nh2ll std55nh2ll-1.pdf
STD55NH2LLSTD55NH2LL-1N-channel 24V - 0.010 - 40A - DPAK/IPAKUltra low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD55NH2LL-1 24V
std55n4f5.pdf
STD55N4F5N-channel 40 V, 7.3 m, 40 A, DPAKSTripFET V Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTD55N4F5 40 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - STD55NH2LLT4 MOSFET datasheet
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History: 2SK3192 | FQD4N25TM
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