All MOSFET. STD5N60M2 Datasheet

 

STD5N60M2 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD5N60M2

Marking Code: 5N60M2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 8.5 nC

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 13 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: DPAK

STD5N60M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD5N60M2 Datasheet (PDF)

1.1. std5n60m2 stp5n60m2 stu5n60m2.pdf Size:1267K _st

STD5N60M2
STD5N60M2

STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.5 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 STD5N60M2 1 STP5N60M2 650 V 1.4 Ω 3.5 A DPAK STU5N60M2 TAB • Extremely low gate charge TAB • Lower RDS(on) x area vs previous generation 3 3 • Lo

4.1. stb5n62k3 std5n62k3 stf5n62k3 stp5n62k3 stu5n62k3.pdf Size:1172K _st

STD5N60M2
STD5N60M2

STB5N62K3, STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3 N-channel 620 V, 1.28 Ω, 4.2 A SuperMESH3™ Power MOSFET D²PAK, DPAK,TO-220FP, TO-220 and IPAK Features RDS(on) Order codes VDSS ID Pw max. 3 3 3 2 2 1 STB5N62K3 1 1 70 W STD5N62K3 DPAK TO-220 TO-220FP STF5N62K3 620 V < 1.6 Ω 4.2 A 25 W STP5N62K3 70 W STU5N62K3 3 3 2 ■ 100% avalanche tested 1 1 IPAK ■ E

 5.1. std5n20l.pdf Size:283K _st

STD5N60M2
STD5N60M2

STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STD5N20L 200 V < 0.7 Ω 5 A 33 W TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 3 1 DESCRIPTION The STD5N20L utilizes the latest advanced de- sign rules of ST’s proprietary STripFET™ techno

5.2. std5nk50z-1.pdf Size:454K _st

STD5N60M2
STD5N60M2

STB5NK50Z-1 - STP5NK50ZFP STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22Ω-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP5NK50Z 500 V < 1.5 Ω 4.4 A 70 W STP5NK50ZFP 500 V < 1.5 Ω 4.4 A 25 W STD5NK50Z 500 V < 1.5 Ω 4.4 A 70 W STD5NK50Z-1 500 V < 1.5 Ω 4.4 A 70 W STB5BK50Z-1 500 V < 1.5 Ω 4.4 A 70 W 3 2 1 TYPICAL

 5.3. stb5nk50z-1 stb5nk50zt4 std5nk50zt4 stp5nk50zfp.pdf Size:436K _st

STD5N60M2
STD5N60M2

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH™MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STB5NK50Z 500 V < 1.5 Ω 4.4 A 70 W STB5NK50Z-1 500 V < 1.5 Ω 4.4 A 70 W STD5NK50Z 500 V < 1.5 Ω 4.4 A 70 W STD5NK50Z-1 500 V < 1.5 Ω 4.4 A 70 W 3 2 1 3 STP5K50Z 50

5.4. stb5n52k3 std5n52k3 stf5n52k3 stp5n52k3 stu5n52k3.pdf Size:1175K _st

STD5N60M2
STD5N60M2

STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK Features Order codes VDSS RDS(on) max ID Pw STB5N52K3 70 W 3 3 3 2 2 1 STD5N52K3 70 W 1 1 STF5N52K3 525 V < 1.5 Ω 4.4 A 25 W TO-220 TO-220FP DPAK STP5N52K3 70 W STU5N52K3 70 W ■ 100% avalanche tested 3 3 2 ■ Extremely high

 5.5. std5n52k3 stf5n52k3 stp5n52k3 stu5n52k3.pdf Size:575K _st

STD5N60M2
STD5N60M2

STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 Ω, 4.4 A, DPAK, IPAK, TO-220, TO-220FP SuperMESH3™ Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID Pw STD5N52K3 70 W 3 3 2 2 1 1 STF5N52K3 25 W 525 V < 1.5 Ω 4.4 A TO-220 TO-220FP STP5N52K3 70 W STU5N52K3 ■ 100% avalanche tested 3 3 2 ■ Extremely large avalanche performance 1 1

5.6. stb5nk50z-1 std5nk50z-1 stp5nk50z stp5nk50zfp.pdf Size:449K _st

STD5N60M2
STD5N60M2

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH™MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STB5NK50Z 500 V < 1.5 Ω 4.4 A 70 W STB5NK50Z-1 500 V < 1.5 Ω 4.4 A 70 W STD5NK50Z 500 V < 1.5 Ω 4.4 A 70 W STD5NK50Z-1 500 V < 1.5 Ω 4.4 A 70 W 3 2 1 3 STP5K50Z 50

5.7. stp8nm60 std5nm60.pdf Size:603K _st

STD5N60M2
STD5N60M2

STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh™ Power MOSFET TYPE VDSS RDS(on) ID Pw STP8NM60 600 V < 1 Ω 8A 100 W STP8NM60FP 600 V < 1 Ω 8A(*) 30 W STD5NM60 600 V < 1 Ω 5A 96 W STD5NM60-1 600 V < 1 Ω 5A 96 W 3 2 1 TYPICAL RDS(on) = 0.9Ω TO-220 TO-220FP HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TE

5.8. stb8nm60t4 std5nm60-1 std5nm60t4 stp8nm60fp.pdf Size:554K _st

STD5N60M2
STD5N60M2

STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS(on) ID Pw 3 1 STD5NM60 650 V < 1 Ω 5 A 96 W 3 2 DPAK STD5NM60-1 650 V < 1 Ω 5 A 96 W 1 TO-220FP STB8NM60 650 V < 1 Ω 5 A 100 W 3 1 STP8NM60 650 V < 1 Ω 8 A 100 W D²PAK STP8NM60FP 650 V < 1 Ω 8 A(1) 30 W 3 ■ 100% ava

5.9. std5n20lt4.pdf Size:268K _st

STD5N60M2
STD5N60M2

STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STD5N20L 200 V < 0.7 Ω 5 A 33 W TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 3 1 DESCRIPTION The STD5N20L utilizes the latest advanced de- sign rules of ST’s proprietary STripFET™ techno

5.10. stf5n52u std5n52u.pdf Size:757K _st

STD5N60M2
STD5N60M2

STD5N52U STF5N52U N-channel 525 V, 1.28 Ω, 4.4 A, DPAK, TO-220FP UltraFASTmesh™ Power MOSFET Features RDS(on) Type VDSS ID Pw max STD5N52U 525 V < 1.5 Ω 4.4 A 70 W STF5N52U 525 V < 1.5 Ω 4.4 A 25 W 3 3 2 ■ 100% avalanche tested 1 1 DPAK ■ Outstanding dv/dt capability TO-220FP ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very low RDS(on) ■

5.11. std5n20.pdf Size:254K _st

STD5N60M2
STD5N60M2

STD5N20 N-CHANNEL 200V - 0.6Ω - 5A DPAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STD5N20 200 V < 0.8 Ω 5 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 ADD SUFFIX “T4” FOR OREDERING IN TAPE & 1 REEL DPAK TO-252 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- INTERNAL S

5.12. std5nb20.pdf Size:53K _st

STD5N60M2
STD5N60M2

STD5NB20 ® N - CHANNEL 200V - 0.70Ω - 5A DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD5NB20 200 V < 0.8 Ω 5 A TYPICAL R =0.7 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE 1 DESCRIPTION Using the latest high voltage MESH O

5.13. std5nm50 std5nm50-1.pdf Size:423K _st

STD5N60M2
STD5N60M2

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V <0.8Ω 7.5 A STD5NM50-1 500V <0.8Ω 7.5 A TYPICAL RDS(on) = 0.7Ω 3 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DPAK IPAK TIGHT PROCESS CONTROL AND HIGH TO-252 TO

5.14. std5ne10l.pdf Size:43K _st

STD5N60M2
STD5N60M2

STD5NE10L  N - CHANNEL 100V - 0.3 Ω - 5A - DPAK/IPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD5NE10L 100 V < 0.4 Ω 5 A TYPICAL R = 0.3 Ω DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED 3 3 APPLICATION ORIENTED 2 1 CHARACTERIZATION 1 FOR TAPE & REEL AND OTHER IPAK DPAK PACKAGING OPTIONS CONTACT

5.15. stb5nk52zd-1 std5nk52zd stf5nk52zd stp5nk52zd.pdf Size:776K _st

STD5N60M2
STD5N60M2

STD5NK52ZD, STB5NK52ZD-1 STF5NK52ZD,STP5NK52ZD N-channel 520 V,1.22 Ω,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH™ Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 2 IPAK 3 STB5NK52ZD-1 520 V < 1.5 Ω 4.4 A 70 W 2 1 2 I PAK 1 STD5NK52ZD-1 520 V < 1.5 Ω 4.4 A 70 W 3 STD5NK52ZD 520 V < 1.5 Ω 4.4 A 70 W 1 STF5NK52ZD 520 V < 1.5 Ω 4.4 A 25 W D

5.16. std5nm50t4.pdf Size:338K _st

STD5N60M2
STD5N60M2

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V <0.8Ω 7.5 A STD5NM50-1 500V <0.8Ω 7.5 A TYPICAL RDS(on) = 0.7Ω 3 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DPAK IPAK TIGHT PROCESS CONTROL AND HIGH TO-252 TO

5.17. stp8nm60 std5nm60 stb8nm60.pdf Size:559K _st

STD5N60M2
STD5N60M2

STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS(on) ID Pw 3 1 STD5NM60 650 V < 1 Ω 5 A 96 W 3 2 DPAK STD5NM60-1 650 V < 1 Ω 5 A 96 W 1 TO-220FP STB8NM60 650 V < 1 Ω 5 A 100 W 3 1 STP8NM60 650 V < 1 Ω 8 A 100 W D²PAK STP8NM60FP 650 V < 1 Ω 8 A(1) 30 W 3 ■ 100% ava

5.18. std5n95k3 stf5n95k3 stp5n95k3 stu5n95k3.pdf Size:789K _st

STD5N60M2
STD5N60M2

STD5N95K3, STF5N95K3 STP5N95K3, STU5N95K3 N-channel 950 V, 3 Ω, 4 A, DPAK, TO-220, TO-220FP, IPAK Zener-protected SuperMESH3™ Power MOSFET Features Type VDSS RDS(on) max ID Pw STD5N95K3 950 V < 3.5 Ω 4 A 90 W 3 3 2 2 1 1 STF5N95K3 950 V < 3.5 Ω 4 A 25 W TO-220 TO-220FP STP5N95K3 950 V < 3.5 Ω 4 A 90 W STU5N95K3 950 V < 3.5 Ω 4 A 90 W ■ 100% avalanche tested 3 2

5.19. std5nk40z-1 std5nk40zt4 stp5nk40z stp5nk40zfp.pdf Size:432K _st

STD5N60M2
STD5N60M2

STP5NK40Z - STP5NK40ZFP STD5NK40Z - STD5NK40Z-1 N-CHANNEL 400V - 1.47Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP5NK40Z 400 V < 1.8 Ω 3 A 45 W STP5NK40ZFP 400 V < 1.8 Ω 3 A 20 W STD5NK40Z 400 V < 1.8 Ω 3 A 45 W STD5NK40Z-1 400 V < 1.8 Ω 3 A 45 W 3 TYPICAL RDS(on) = 1.47 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-

5.20. stp5nk60z stp5nk60zfp std5nk60z.pdf Size:488K _st

STD5N60M2
STD5N60M2

STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS@ RDS(on) Id PTOT TJmax STP5NK60Z 650 V < 1.6 Ω 5 A 90 W STP5NK60ZFP 650 V < 1.6 Ω 5 A 25 W STD5NK60Z 650 V < 1.6 Ω 5 A 90 W 3 3 ■ TYPICAL RDS(on) = 1.2 Ω 2 2 1 1 ■ EXTREMELY HIGH dv/dt CAPABILITY TO

5.21. std5nm50.pdf Size:463K _st

STD5N60M2
STD5N60M2

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V <0.8Ω 7.5 A STD5NM50-1 500V <0.8Ω 7.5 A TYPICAL RDS(on) = 0.7Ω 3 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DPAK IPAK TIGHT PROCESS CONTROL AND HIGH TO-252 TO

5.22. std5ne10.pdf Size:349K _st

STD5N60M2
STD5N60M2

STD5NE10 ® N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD5NE10 100 V < 0.4 Ω 5 A TYPICAL R = 0.32 Ω DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL IPAK DPAK DESCRIPTION TO-251 TO-252 This Po

5.23. std5nk60zt4.pdf Size:410K _st

STD5N60M2
STD5N60M2

STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS@ RDS(on) Id PTOT TJmax STP5NK60Z 650 V < 1.6 Ω 5 A 90 W STP5NK60ZFP 650 V < 1.6 Ω 5 A 25 W STD5NK60Z 650 V < 1.6 Ω 5 A 90 W 3 3 ■ TYPICAL RDS(on) = 1.2 Ω 2 2 1 1 ■ EXTREMELY HIGH dv/dt CAPABILITY TO

5.24. std5nb30.pdf Size:259K _st

STD5N60M2
STD5N60M2

STD5NB30 ® N - CHANNEL 300V - 0.75 Ω - 5A - DPAK PowerMESH MOSFET TYPE V R I DSS DS(on) D STD5NB30 300 V < 0.9 Ω 5 A TYPICAL R = 0.75 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED ADD SUFFIX "T4" FOR ORDERING IN TAPE 1 & REEL DPAK DESCRIPTION TO-252 Using the latest high voltage MESH

5.25. stb5nk52zd-1 std5nk52zd-1.pdf Size:771K _st

STD5N60M2
STD5N60M2

STD5NK52ZD, STB5NK52ZD-1 STF5NK52ZD,STP5NK52ZD N-channel 520 V,1.22 Ω,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH™ Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 2 IPAK 3 STB5NK52ZD-1 520 V < 1.5 Ω 4.4 A 70 W 2 1 2 I PAK 1 STD5NK52ZD-1 520 V < 1.5 Ω 4.4 A 70 W 3 STD5NK52ZD 520 V < 1.5 Ω 4.4 A 70 W 1 STF5NK52ZD 520 V < 1.5 Ω 4.4 A 25 W D

5.26. std5n95k5 stf5n95k5 stp5n95k5.pdf Size:1315K _st

STD5N60M2
STD5N60M2

STD5N95K5, STF5N95K5, STP5N95K5 N-channel 950 V, 2 Ω typ., 3.5 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB 3 Order codes VDS RDS(on) max ID PTOT 1 STD5N95K5 70 W DPAK STF5N95K5 950 V 2.5 Ω 3.5 A 25 W TAB STP5N95K5 70 W • TO-220 worldwide best RDS(on) • Worldwide best FOM (figure of merit) 3

5.27. stp5nk40z stp5nk40zfp std5nk40z std5nk40z-1.pdf Size:602K _st

STD5N60M2
STD5N60M2

STP5NK40Z - STP5NK40ZFP STD5NK40Z - STD5NK40Z-1 N-CHANNEL 400V - 1.47Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP5NK40Z 400 V < 1.8 Ω 3 A 45 W STP5NK40ZFP 400 V < 1.8 Ω 3 A 20 W STD5NK40Z 400 V < 1.8 Ω 3 A 45 W STD5NK40Z-1 400 V < 1.8 Ω 3 A 45 W 3 TYPICAL RDS(on) = 1.47 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-

5.28. std5nm50t4.pdf Size:277K _inchange_semiconductor

STD5N60M2
STD5N60M2

isc N-Channel MOSFET Transistor STD5NM50T4 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-Source Voltage ±30 V

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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