STD60NH03LT4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD60NH03LT4
Marking Code: D60NH03L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 15.7 nC
trⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 380 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DPAK
STD60NH03LT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD60NH03LT4 Datasheet (PDF)
std60nh03l-1 std60nh03lt4.pdf
STD60NH03LSTD60NH03L-1N-channel 30V - 0.0075 - 60A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NH03L-1 30V
std60nh03l std60nh03l-1.pdf
STD60NH03LSTD60NH03L-1N-channel 30V - 0.0075 - 60A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NH03L-1 30V
std60nf55la.pdf
STD60NF55LAN-channel 55V - 0.012 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF55LA 55V
std60nf3ll std60nf3llt4.pdf
STD60NF3LLN-channel 30V - 0.0075 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF3LL 60V
std60n3lh5 stp60n3lh5 stu60n3lh5 stu60n3lh5-s stu60n3lh5-s.pdf
STD60N3LH5, STP60N3LH5STU60N3LH5, STU60N3LH5-SN-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220STripFET V Power MOSFETFeaturesOrder codes VDSS RDS(on) max ID3STD60N3LH5 30 V 0.008 48 A 213STP60N3LH5 30 V 0.0084 48 A 21IPAKTO-220STU60N3LH5 30 V 0.0084 48 ASTU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark32 Extr
std60nf06t4.pdf
STD60NF06N-channel 60V - 0.014 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF06 60V
std60nf55l-1.pdf
STD60NF55LSTD60NF55L-1N-channel 55V - 0.012 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF55L-1 55V
std60n3lh5 stp60n3lh5 stu60n3lh5.pdf
STD60N3LH5STP60N3LH5, STU60N3LH5N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD60N3LH5 30 V 0.008 48 A 32STP60N3LH5 30 V 0.0084 48 A1STU60N3LH5 30 V 0.0084 48 ATO-220 RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on) 3211 Very low switching gate charge
std60nf06.pdf
STD60NF06N-channel 60V - 0.014 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF06 60V
std60nf55l.pdf
STD60NF55LN-CHANNEL 55V - 0.012 - 60A DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD60NF55L 55V
std60nf55lt4.pdf
STD60NF55LSTD60NF55L-1N-channel 55V - 0.012 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF55L-1 55V
stb60n55f3 std60n55f3 stf60n55f3 sti60n55f3 stu60n55f3 stp60n55f3.pdf
STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V
std60nf3l.pdf
STD60NF3Lwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL
std60nf06t4.pdf
STD60NF06T4www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limi
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NTD4809NH-1G
