STD60NH03LT4
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: STD60NH03LT4
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 70
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 60
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 95
ns
Cossⓘ - Выходная емкость: 380
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009
Ohm
Тип корпуса:
DPAK
- подбор MOSFET транзистора по параметрам
STD60NH03LT4
Datasheet (PDF)
..1. Size:535K st
std60nh03l-1 std60nh03lt4.pdf 
STD60NH03LSTD60NH03L-1N-channel 30V - 0.0075 - 60A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NH03L-1 30V
4.1. Size:540K st
std60nh03l std60nh03l-1.pdf 
STD60NH03LSTD60NH03L-1N-channel 30V - 0.0075 - 60A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NH03L-1 30V
8.1. Size:327K st
std60nf55la.pdf 
STD60NF55LAN-channel 55V - 0.012 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF55LA 55V
8.2. Size:403K st
std60nf3ll std60nf3llt4.pdf 
STD60NF3LLN-channel 30V - 0.0075 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF3LL 60V
8.3. Size:747K st
std60n3lh5 stp60n3lh5 stu60n3lh5 stu60n3lh5-s stu60n3lh5-s.pdf 
STD60N3LH5, STP60N3LH5STU60N3LH5, STU60N3LH5-SN-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220STripFET V Power MOSFETFeaturesOrder codes VDSS RDS(on) max ID3STD60N3LH5 30 V 0.008 48 A 213STP60N3LH5 30 V 0.0084 48 A 21IPAKTO-220STU60N3LH5 30 V 0.0084 48 ASTU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark32 Extr
8.4. Size:407K st
std60nf06t4.pdf 
STD60NF06N-channel 60V - 0.014 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF06 60V
8.5. Size:438K st
std60nf55l-1.pdf 
STD60NF55LSTD60NF55L-1N-channel 55V - 0.012 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF55L-1 55V
8.6. Size:386K st
std60n3lh5 stp60n3lh5 stu60n3lh5.pdf 
STD60N3LH5STP60N3LH5, STU60N3LH5N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD60N3LH5 30 V 0.008 48 A 32STP60N3LH5 30 V 0.0084 48 A1STU60N3LH5 30 V 0.0084 48 ATO-220 RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on) 3211 Very low switching gate charge
8.7. Size:414K st
std60nf06.pdf 
STD60NF06N-channel 60V - 0.014 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF06 60V
8.8. Size:455K st
std60nf55l.pdf 
STD60NF55LN-CHANNEL 55V - 0.012 - 60A DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD60NF55L 55V
8.9. Size:428K st
std60nf55lt4.pdf 
STD60NF55LSTD60NF55L-1N-channel 55V - 0.012 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF55L-1 55V
8.10. Size:624K st
stb60n55f3 std60n55f3 stf60n55f3 sti60n55f3 stu60n55f3 stp60n55f3.pdf 
STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V
8.11. Size:1440K cn vbsemi
std60nf3l.pdf 
STD60NF3Lwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL
8.12. Size:825K cn vbsemi
std60nf06t4.pdf 
STD60NF06T4www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limi
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