All MOSFET. STD9N60M2 Datasheet

 

STD9N60M2 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD9N60M2

Marking Code: 9N60M2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 7.5 nS

Drain-Source Capacitance (Cd): 18 pF

Maximum Drain-Source On-State Resistance (Rds): 0.78 Ohm

Package: DPAK

STD9N60M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD9N60M2 Datasheet (PDF)

1.1. std9n60m2 stp9n60m2 stu9n60m2.pdf Size:1473K _st

STD9N60M2
STD9N60M2

STD9N60M2, STP9N60M2, STU9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 TJmax max 1 DPAK STD9N60M2 STP9N60M2 650 V 0.78 Ω 5.5 A TAB STU9N60M2 TAB • Extremely low gate charge 3 3 • Lower RDS(on) x area vs previous generation 2 2

4.1. std9n65m2 stf9n65m2 stp9n65m2 stu9n65m2.pdf Size:1352K _st

STD9N60M2
STD9N60M2

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB RDS(on) Order codes VDS max ID 3 1 DPAK STD9N65M2 3 2 1 STF9N65M2 650 V 0.9 Ω 5 A STP9N65M2 TO-220FP TAB STU9N65M2 TAB • Extremely low gate charge 3 2 • Excellent output capacit

 5.1. std9n40m2.pdf Size:841K _st

STD9N60M2
STD9N60M2

STD9N40M2 N-channel 400 V, 0.59 Ω typ., 6 A MDmesh II Plus™ low Qg Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code VDS @ TJmax RDS(on) max ID STD9N40M2 450 V 0.8 Ω 6 A TAB • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation 1 • Low gate input resistance DPAK • 100% avalanche tested • Zener-protected Applica

5.2. std9nm60n stf9nm60n stp9nm60n.pdf Size:896K _st

STD9N60M2
STD9N60M2

STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Order codes ID (@Tjmax) max. 3 3 2 2 1 STD9NM60N 1 TO-220FP TO-220 STF9NM60N 650 V < 0.745 Ω 6.5 A STP9NM60N ■ 100% avalanche tested 3 1 ■ Low input capacitance and gate charge DPAK ■ Low gate input resistance Application Switchin

 5.3. std9nm50n std9nm50n-1 stp9nm50n stf9nm50n.pdf Size:485K _st

STD9N60M2
STD9N60M2

STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) 3 2 3 STD9NM50N 550V <0.56Ω 7.5A 1 2 1 STD9NM50N-1 550V <0.56Ω 7.5A IPAK TO-220 STP9NM50N 550V <0.56Ω 7.5A STF9NM50N 550V <0.56Ω 7.5A(1) 1. Limited only by maximum temperature al

5.4. std9n10.pdf Size:383K _st

STD9N60M2
STD9N60M2

STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD9N10 100 V < 0.27 Ω 9 A TYPICAL R = 0.23 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE I

 5.5. std9nm40n.pdf Size:1072K _st

STD9N60M2
STD9N60M2

STD9NM40N, STP9NM40N N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages Datasheet — production data Features Order codes VDSS@TJMAX RDS(on)max. ID STD9NM40N TAB 450 V < 0.79 Ω 5.6 A STP9NM40N TAB 3 ■ 100% avalanche tested 3 1 2 1 ■ Low input capacitance and gate charge DPAK TO-220 ■ Low gate input resistance Applications

5.6. std9n10l.pdf Size:66K _st

STD9N60M2
STD9N60M2

STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD9N10L 100 V < 0.27 Ω 9 A TYPICAL R = 0.22 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 3 175oC OPERATING TEMPERATURE 3 2 HIGH dV/dt RUGGEDNESS 1 1 APPLICATION ORIENTED CHARACTERIZATION SURFACE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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