STE145N65M5 Datasheet and Replacement
Type Designator: STE145N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 679 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 143 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 413 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: ISOTOP
STE145N65M5 substitution
STE145N65M5 Datasheet (PDF)
ste145n65m5.pdf
STE145N65M5N-channel 650 V, 0.012 typ., 143 A, MDmesh V Power MOSFET in a ISOTOP packageDatasheet - preliminary dataFeatures Order code VDS @Tjmax RDS(on) max IDSTE145N65M5 710 V 0.015 143 A Very low RDS(on) Higher VDSS rating Higher dv/dt capabilityISOTOP Excellent switching performance 100% avalanche testedApplicationsFigure 1. Internal sch
ste140nf20d.pdf
STE140NF20DN-channel 200 V, 0.010 , 140 A, ISOTOPSTripFET II with fast recovery diode Power MOSFETFeatures Type VDSS RDS(on) max IDSTE140NF20D 200 V
Datasheet: STD96N3LLH6 , STD9HN65M2 , STD9N40M2 , STD9N60M2 , STD9N65M2 , STD9NM40N , STD9NM50N-1 , STE139N65M5 , 2SK3918 , STE88N65M5 , STF100N10F7 , STF10N105K5 , STF10N60M2 , STF10N80K5 , STF10N95K5 , STF10P6F6 , STF110N10F7 .
Keywords - STE145N65M5 MOSFET datasheet
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