STE145N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STE145N65M5
SMD Transistor Code: 145N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 679 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 143 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 414 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 413 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: ISOTOP
STE145N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE145N65M5 Datasheet (PDF)
1.1. ste145n65m5.pdf 
Size:944K _upd
STE145N65M5 N-channel 650 V, 0.012 Ω typ., 143 A, MDmesh™ V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS(on) max ID STE145N65M5 710 V 0.015 Ω 143 A • Very low RDS(on) • Higher VDSS rating • Higher dv/dt capability ISOTOP • Excellent switching performance • 100% avalanche tested Applications Figure 1. Internal sch
5.1. ste140nf20d.pdf Size:620K _st
STE140NF20D N-channel 200 V, 0.010 ?, 140 A, ISOTOP STripFET II with fast recovery diode Power MOSFET Features Type VDSS RDS(on) max ID STE140NF20D 200 V < 0.012 ? 140 A Exceptional dv/dt capability Low gate charge 100% avalanche tested Application ISOTOP Switching applications Description This Power MOSFET is produced using Figure 1. Internal schematic diagram STMicroelec
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