All MOSFET. STE145N65M5 Datasheet

 

STE145N65M5 MOSFET. Datasheet pdf. Equivalent

Type Designator: STE145N65M5

SMD Transistor Code: 145N65M5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 679 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 143 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 414 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 413 pF

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: ISOTOP

STE145N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STE145N65M5 Datasheet (PDF)

1.1. ste145n65m5.pdf Size:944K _upd

STE145N65M5 STE145N65M5

STE145N65M5 N-channel 650 V, 0.012 Ω typ., 143 A, MDmesh™ V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS(on) max ID STE145N65M5 710 V 0.015 Ω 143 A • Very low RDS(on) • Higher VDSS rating • Higher dv/dt capability ISOTOP • Excellent switching performance • 100% avalanche tested Applications Figure 1. Internal sch

5.1. ste140nf20d.pdf Size:620K _st

STE145N65M5 STE145N65M5

STE140NF20D N-channel 200 V, 0.010 ?, 140 A, ISOTOP STripFET™ II with fast recovery diode Power MOSFET Features Type VDSS RDS(on) max ID STE140NF20D 200 V < 0.012 ? 140 A ¦ Exceptional dv/dt capability ¦ Low gate charge ¦ 100% avalanche tested Application ISOTOP Switching applications Description This Power MOSFET is produced using Figure 1. Internal schematic diagram STMicroelec

Datasheet: STD96N3LLH6 , STD9HN65M2 , STD9N40M2 , STD9N60M2 , STD9N65M2 , STD9NM40N , STD9NM50N-1 , STE139N65M5 , 2SK117 , STE88N65M5 , STF100N10F7 , STF10N105K5 , STF10N60M2 , STF10N80K5 , STF10N95K5 , STF10P6F6 , STF110N10F7 .

Back to Top