STE145N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STE145N65M5
Marking Code: 145N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 679 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 143 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 414 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 413 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: ISOTOP
STE145N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE145N65M5 Datasheet (PDF)
ste145n65m5.pdf
STE145N65M5N-channel 650 V, 0.012 typ., 143 A, MDmesh V Power MOSFET in a ISOTOP packageDatasheet - preliminary dataFeatures Order code VDS @Tjmax RDS(on) max IDSTE145N65M5 710 V 0.015 143 A Very low RDS(on) Higher VDSS rating Higher dv/dt capabilityISOTOP Excellent switching performance 100% avalanche testedApplicationsFigure 1. Internal sch
ste140nf20d.pdf
STE140NF20DN-channel 200 V, 0.010 , 140 A, ISOTOPSTripFET II with fast recovery diode Power MOSFETFeatures Type VDSS RDS(on) max IDSTE140NF20D 200 V
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