All MOSFET. STF110N10F7 Datasheet

 

STF110N10F7 MOSFET. Datasheet pdf. Equivalent

Type Designator: STF110N10F7

SMD Transistor Code: 110N10F7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 45 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 72 nC

Rise Time (tr): 36 nS

Drain-Source Capacitance (Cd): 992 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO-220FP

STF110N10F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STF110N10F7 Datasheet (PDF)

1.1. stf110n10f7.pdf Size:1225K _update

STF110N10F7
STF110N10F7

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID PTOT STF110N10F7 45 A 30 W TAB 100 V 0.007 Ω STP110N10F7 110 A 150 W • Ultra low on-resistance 3 3 2 2 1 1 • 100% avalanche tested TO-220FP TO-220 Applications • Sw

1.2. stf110n10f7.pdf Size:1225K _upd

STF110N10F7
STF110N10F7

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID PTOT STF110N10F7 45 A 30 W TAB 100 V 0.007 Ω STP110N10F7 110 A 150 W • Ultra low on-resistance 3 3 2 2 1 1 • 100% avalanche tested TO-220FP TO-220 Applications • Sw

 5.1. stf11n65m5.pdf Size:1276K _update

STF110N10F7
STF110N10F7

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V < 0.48 Ω 9 A STP11N65M5 3 2 STU

5.2. stf11n65m2 stfi11n65m2.pdf Size:866K _update

STF110N10F7
STF110N10F7

STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - preliminary data Features Order codes VDS RDS(on) max ID STF11N65M2 650 V 0.67 Ω 7 A STFI11N65M2 • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation 1 2 2 3 1 • Low gate input resistance 2 TO-220FP I P

 5.3. stf11nm65n.pdf Size:1258K _update

STF110N10F7
STF110N10F7

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages Datasheet - production data Features TAB VDSS @ RDS(on) 3 Order codes ID 1 TJmax max 3 DPAK 2 1 STD11NM65N STF11NM65N TO-220FP 710 V < 0.455 Ω 11 A STFI11NM65N TAB STP11NM65N • 100% avalanche tested 3 1 2 2

5.4. stf11n50m2.pdf Size:986K _update

STF110N10F7
STF110N10F7

STD11N50M2, STF11N50M2 N-channel 500 V, 0.45 Ω typ,8 A, MDmesh II Plus™ low Qg Power MOSFETs in DPAK and TO-220FP packages Datasheet - preliminary data Features Order codes VDS @ TJmax RDS(on) max ID STD11N50M2 550 V 0.53 Ω 8 A STF11N50M2 TAB • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation 3 DPAK 2 • Low gate input resistance 1 •

 5.5. stf11nm60n.pdf Size:632K _update

STF110N10F7
STF110N10F7

STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 Ω 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 Ω 10 A STD11NM60N 650 V 0.45 Ω 10 A STD11NM60N-1 650 V 0.45 Ω 10 A STF11NM60N 650 V 0.45 Ω 10 A(1) STP11NM60N 650 V 0.45 Ω

5.6. std11nm60n-1 std11nm60n stf11nm60n.pdf Size:632K _upd

STF110N10F7
STF110N10F7

STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 Ω 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 Ω 10 A STD11NM60N 650 V 0.45 Ω 10 A STD11NM60N-1 650 V 0.45 Ω 10 A STF11NM60N 650 V 0.45 Ω 10 A(1) STP11NM60N 650 V 0.45 Ω

5.7. stf11n65m2.pdf Size:866K _upd

STF110N10F7
STF110N10F7

STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - preliminary data Features Order codes VDS RDS(on) max ID STF11N65M2 650 V 0.67 Ω 7 A STFI11N65M2 • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation 1 2 2 3 1 • Low gate input resistance 2 TO-220FP I P

5.8. stf11n65m5.pdf Size:1276K _upd

STF110N10F7
STF110N10F7

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V < 0.48 Ω 9 A STP11N65M5 3 2 STU

5.9. std11n50m2 stf11n50m2.pdf Size:986K _upd

STF110N10F7
STF110N10F7

STD11N50M2, STF11N50M2 N-channel 500 V, 0.45 Ω typ,8 A, MDmesh II Plus™ low Qg Power MOSFETs in DPAK and TO-220FP packages Datasheet - preliminary data Features Order codes VDS @ TJmax RDS(on) max ID STD11N50M2 550 V 0.53 Ω 8 A STF11N50M2 TAB • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation 3 DPAK 2 • Low gate input resistance 1 •

5.10. std11nm65n stf11nm65n.pdf Size:1258K _upd

STF110N10F7
STF110N10F7

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages Datasheet - production data Features TAB VDSS @ RDS(on) 3 Order codes ID 1 TJmax max 3 DPAK 2 1 STD11NM65N STF11NM65N TO-220FP 710 V < 0.455 Ω 11 A STFI11NM65N TAB STP11NM65N • 100% avalanche tested 3 1 2 2

5.11. std11nm50n stf11nm50n stp11nm50n.pdf Size:678K _st

STF110N10F7
STF110N10F7

STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 ?, 9 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220 Features RDS(on) Type VDSS @TJmax ID 3 max 1 3 STD11NM50N 2 DPAK 1 STF11NM50N 550 V < 0.47 ? 9 A STP11NM50N TO-220 100% avalanche tested 3 2 Low input capacitances and gate charge 1 TO-220FP Low gate input resistance Application Switching applicatio

5.12. stf11n65k3.pdf Size:837K _st

STF110N10F7
STF110N10F7

STF11N65K3 N-channel 650 V, 0.765 ?, 11 A, TO-220FP SuperMESH3 Power MOSFET Features RDS(on) Type VDSS ID Pw max STF10N65K3 650 V < 0.85 ? 11 A 35 W 100% avalanche tested 3 Extremely high dv/dt capability 2 1 Gate charge minimized TO-220FP Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Application Figure 1. Interna

5.13. stb11nm65n stf11nm65n stp11nm65n stw11nm65n.pdf Size:539K _st

STF110N10F7
STF110N10F7

STB11NM65N - STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N N-channel 650V - 0.33? - 12A - TO-220/FP- D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID (@TJmax) Max 3 2 3 1 2 STI11NM65N 710 V < 0.38 ? 12 A 1 I?PAK TO-220 STB11NM65N 710 V < 0.38 ? 12 A STF11NM65N 710 V < 0.38 ? 12 A(1) 3 1 STP11NM65N 710 V < 0.38 ? 12 A D?PAK STW11NM65N 710 V

5.14. stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf Size:632K _st

STF110N10F7
STF110N10F7

STx11NM60N N-channel 600 V, 0.37 ?, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 ? 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 ? 10 A STD11NM60N 650 V 0.45 ? 10 A STD11NM60N-1 650 V 0.45 ? 10 A STF11NM60N 650 V 0.45 ? 10 A(1) STP11NM60N 650 V 0.45 ? 10 A 3 3 3 2 2

5.15. stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf Size:635K _st

STF110N10F7
STF110N10F7

STx11NM60N N-channel 600 V, 0.37 ?, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 ? 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 ? 10 A STD11NM60N 650 V 0.45 ? 10 A STD11NM60N-1 650 V 0.45 ? 10 A STF11NM60N 650 V 0.45 ? 10 A(1) STP11NM60N 650 V 0.45 ? 10 A 3 3 3 2 2

5.16. stb11nm80 stf11nm80 stw11nm80 stp11nm80.pdf Size:943K _st

STF110N10F7
STF110N10F7

STB11NM80, STF11NM80 STP11NM80, STW11NM80 N-channel 800 V, 0.35 ?, 11 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 Features RDS(on) Type VDSS RDS(on)*Qg ID max 3 1 3 STB11NM80 2 D?PAK 1 STF11NM80 TO-247 800 V < 0.40 ? 14?*nC 11 A STP11NM80 STW11NM80 3 Low input capacitance and gate charge 2 3 1 2 1 Low gate input resistance TO-220FP TO-220 Best RDS(on

5.17. std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf Size:750K _st

STF110N10F7
STF110N10F7

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 ?, 10 A, FDmesh II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID 3 3 STD11NM60ND 10 A 1 2 1 STF11NM60ND 10 A(1) DPAK I?PAK STI11NM60ND 650 V < 0.45 ? 10 A 3 2 STP11NM60ND 10 A 1 STU11NM60ND 10 A IPAK 1. Limited only by maximum temperature allowed 3 3

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
Back to Top

 


STF110N10F7
  STF110N10F7
  STF110N10F7
  STF110N10F7
 

social 

LIST

Last Update

MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

 
Back to Top