Справочник MOSFET. STF110N10F7

 

STF110N10F7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STF110N10F7
   Маркировка: 110N10F7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 72 nC
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 992 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO-220FP

 Аналог (замена) для STF110N10F7

 

 

STF110N10F7 Datasheet (PDF)

 ..1. Size:1225K  st
stf110n10f7 stp110n10f7.pdf

STF110N10F7
STF110N10F7

STF110N10F7, STP110N10F7N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max ID PTOTSTF110N10F7 45 A 30 WTAB100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance3 32 21 1 100% avalanche testedTO-220FP TO-220Applications Sw

 9.1. Size:943K  st
stb11nm80 stf11nm80 stw11nm80 stp11nm80.pdf

STF110N10F7
STF110N10F7

STB11NM80, STF11NM80STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, TO-247FeaturesRDS(on) Type VDSS RDS(on)*Qg IDmax313STB11NM802DPAK1STF11NM80TO-247800 V

 9.2. Size:1155K  st
stb11n52k3 stf11n52k3 stp11n52k3.pdf

STF110N10F7
STF110N10F7

STB11N52K3, STF11N52K3 STP11N52K3N-channel 525 V, 0.41 , 10 A SuperMESH3 Power MOSFET in DPAK,TO-220FP and TO-220 packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDSS max. ID PwSTB11N52K3 125 W 3 32 21 1STF11N52K3 525 V

 9.3. Size:1017K  st
stb11n65m5 std11n65m5 stf11n65m5 stp11n65m5.pdf

STF110N10F7
STF110N10F7

STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5DatasheetN-channel 650 V, 0.43 typ., 9 A MDmesh M5 Power MOSFETs in a DPAK, DPAK, TO-220FP and TO-220 packages FeaturesTABTAB32 VDS @311RDS(on)max. IDOrder codeDPAK2D PAKTjmax.TABSTB11N65M5STD11N65M5710 V 0.48 9 A3231 STF11N65M521TO-220TO-220FPSTP11N65M5D(2, TAB) Extremel

 9.4. Size:1258K  st
std11nm65n stf11nm65n stf11nm65n stp11nm65n.pdf

STF110N10F7
STF110N10F7

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V

 9.5. Size:1276K  st
stb11n65m5 stf11n65m5 stp11n65m5 stu11n65m5.pdf

STF110N10F7
STF110N10F7

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTAB2VDSS @ RDS(on) 2 3Order codes ID 31TJmax max 132DPAKD2PAK 1STB11N65M5TO-220FPSTD11N65M5TABSTF11N65M5 710 V

 9.6. Size:632K  st
stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf

STF110N10F7
STF110N10F7

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45

 9.7. Size:632K  st
stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf

STF110N10F7
STF110N10F7

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45

 9.8. Size:1258K  st
std11nm65n stf11nm65n stfi11nm65n stp11nm65n.pdf

STF110N10F7
STF110N10F7

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V

 9.9. Size:635K  st
stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf

STF110N10F7
STF110N10F7

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45

 9.10. Size:837K  st
stf11n65k3.pdf

STF110N10F7
STF110N10F7

STF11N65K3N-channel 650 V, 0.765 , 11 A, TO-220FPSuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF10N65K3 650 V

 9.11. Size:447K  st
stf11n65m2-045y.pdf

STF110N10F7
STF110N10F7

STF11N65M2(045Y)DatasheetN-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF11N65M2(045Y) 650 V 0.68 7 A 25 W Extremely low gate charge321 Excellent output capacitance (COSS) profileTO-220FP narrow leads 100% avalanche tested Zener-protectedD(2) Applications

 9.12. Size:301K  st
stf11n60m2-ep.pdf

STF110N10F7
STF110N10F7

STF11N60M2-EPDatasheetN-channel 600 V, 0.550 typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP packageFeaturesVDS RDS(on) max. IDOrder codeSTF11N60M2-EP 600 V 0.595 7.5 A Extremely low gate charge Excellent output capacitance (COSS) profile321 Very low turn-off switching losses 100% avalanche testedTO-220FP Zener-protectedD(2)Applica

 9.13. Size:904K  st
stb11nm80 stf11nm80 sti11nm80 stp11nm80 stw11nm80.pdf

STF110N10F7
STF110N10F7

STB11NM80, STF11NM80STI11NM80, STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETin DPAK, TO-220FP, IPAK, TO-220, TO-247FeaturesRDS(on) Order codes VDSS RDS(on)*Qg IDmax3312STB11NM801DPAKTO-220FPSTF11NM80STI11NM80 800 V

 9.14. Size:678K  st
std11nm50n stf11nm50n stp11nm50n.pdf

STF110N10F7
STF110N10F7

STD11NM50NSTF11NM50N, STP11NM50NN-channel 500 V, 0.4 , 9 A MDmesh II Power MOSFETin DPAK, TO-220FP and TO-220FeaturesRDS(on) Type VDSS @TJmax ID3max13STD11NM50N2DPAK1STF11NM50N 550 V

 9.15. Size:750K  st
std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf

STF110N10F7
STF110N10F7

STD11NM60ND, STF/I11NM60NDSTP11NM60ND, STU11NM60NDN-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFETI2PAK, TO-220, TO-220FP, IPAK, DPAKFeatures Order codes VDSS (@Tjmax) RDS(on) max ID33STD11NM60ND 10 A 1 21STF11NM60ND 10 A(1)DPAKIPAKSTI11NM60ND 650 V

 9.16. Size:711K  st
stf11nm50n.pdf

STF110N10F7
STF110N10F7

STF11NM50N N-channel 500 V, 0.40 typ., 8.5 A MDmesh II Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V max R max I DS @ T DS(on) DJ STF11NM50N 550 V 0.47 8.5 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications TO-220FP Switching applications Description F

 9.17. Size:986K  st
std11n50m2 stf11n50m2 stf11n50m2.pdf

STF110N10F7
STF110N10F7

STD11N50M2, STF11N50M2N-channel 500 V, 0.45 typ,8 A, MDmesh II Plus low Qg Power MOSFETs in DPAK and TO-220FP packagesDatasheet - preliminary dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTD11N50M2550 V 0.53 8 ASTF11N50M2TAB Extremely low gate charge31 Lower RDS(on) x area vs previous generation3DPAK2 Low gate input resistance1

 9.18. Size:760K  st
std11n50m2 stf11n50m2.pdf

STF110N10F7
STF110N10F7

STD11N50M2, STF11N50M2DatasheetN-channel 500 V, 0.45 typ., 8 A MDmesh M2 Power MOSFETs in DPAK and TO-220FP packagesFeaturesVDS @ TJmax RDS(on)max. IDOrder code PackageTABSTD11N50M2 DPAK3550 V 0.53 8 A2STF11N50M2 TO-220FP1321 Extremely low gate chargeDPAK TO-220FP Excellent output capacitance (COSS) profile 100% avalanche tested Zen

 9.19. Size:866K  st
stf11n65m2 stf11n65m2 stfi11n65m2.pdf

STF110N10F7
STF110N10F7

STF11N65M2, STFI11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTF11N65M2650 V 0.67 7 ASTFI11N65M2 Extremely low gate charge3 Lower RDS(on) x area vs previous generation12231 Low gate input resistance2TO-220FPI P

 9.20. Size:735K  st
stf11n65m2 stfi11n65m2.pdf

STF110N10F7
STF110N10F7

STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh M2 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF11N65M2 650 V 0.68 7 A 25 W STFI11N65M2 Extremely low gate charge TO-220FP I2PAKFP (TO-281) Excellent output capacitance (C ) profile OSS 100% avalanche teste

 9.21. Size:539K  st
stb11nm65n stf11nm65n stp11nm65n stw11nm65n.pdf

STF110N10F7
STF110N10F7

STB11NM65N - STF11NM65NSTI11NM65N-STP11NM65N-STW11NM65NN-channel 650V - 0.33 - 12A - TO-220/FP- D2/I2PAK - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@TJmax) Max32312STI11NM65N 710 V

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