IRFU5410PBF Specs and Replacement
Type Designator: IRFU5410PBF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm
Package: TO-251
IRFU5410PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRFU5410PBF datasheet
irfr5410pbf irfu5410pbf.pdf
PD -95314A IRFR5410PbF IRFU5410PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel D VDSS = -100V l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) l Advanced Process Technology RDS(on) = 0.205 G l Fast Switching l Fully Avalanche Rated ID = -13A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech... See More ⇒
irfu5410.pdf
isc P-Channel MOSFET Transistor IRFU5410 FEATURES Static drain-source on-resistance RDS(on) 205m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 C operating junction temperature ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -100 ... See More ⇒
irfr540zpbf irfu540zpbf.pdf
PD - 96141B IRFR540ZPbF Features IRFU540ZPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free RDS(on) = 28.5m G Description ID = 35A This HEXFET Power MOSFET utilizes the latest S processing techniques to achiev... See More ⇒
irfu540z.pdf
APPROVED PD - TBD AUTOMOTIVE MOSFET IRFR540Z IRFU540Z Features lAdvanced Process Technology HEXFET Power MOSFET lUltra Low On-Resistance D l175 C Operating Temperature VDSS = 100V lFast Switching lRepetitive Avalanche Allowed up to Tjmax RDS(on) = 28.5m G Description ID = 35A Specifically designed for Automotive applications, S this HEXFET Power MOSFET utilizes the l... See More ⇒
Detailed specifications: STF110N10F7, STF11N50M2, STF11N65M2, STF11N65M5, STF11NM60N, STF11NM65N, IRFU540Z, IRFU540ZPBF, 50N06, IRFU5505PBF, IRFU6215PBF, IRFU9010PBF, IRFU9014PBF, IRFU9020PBF, IRFU9024NPBF, IRFU9024PBF, IRFU9110PBF
Keywords - IRFU5410PBF MOSFET specs
IRFU5410PBF cross reference
IRFU5410PBF equivalent finder
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IRFU5410PBF substitution
IRFU5410PBF replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: DH033N04P | NTMFS1D15N03CG
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