IRFY140M MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFY140M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 59 nC
trⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
Package: TO-257AA
IRFY140M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFY140M Datasheet (PDF)
irfy140m.pdf
PD - 94185IRFY140,IRFY140MPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY140 0.077 16*A GlassIRFY140M 0.077 16*A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on
irfy140c.pdf
PD - 91287CIRFY140C,IRFY140CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY140C 0.077 16*A CeramicIRFY140CM 0.077 16*A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves ve
irfy140.pdf
PD - 94185IRFY140,IRFY140MPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY140 0.077 16*A GlassIRFY140M 0.077 16*A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on
irfy140cm.pdf
PD - 91287CIRFY140C,IRFY140CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY140C 0.077 16*A CeramicIRFY140CM 0.077 16*A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves ve
irfy140-t257.pdf
IRFY140-T257MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)1.14 (0.045)FOR HIRELAPPLICATIONS3.56 (0.140)Dia.3.81 (0.150)VDSS 100V1 2 3ID(cont) 18ARDS(on) 0.0920.64 (0.025)Dia.0.89 (0.035) FEATURES2.54 (0.100) 3.05 (0.120)BSC BSC HERMETICALLY SEALED TO257AA
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
