IRFY430CM Specs and Replacement
Type Designator: IRFY430CM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-257AA
IRFY430CM substitution
- MOSFET ⓘ Cross-Reference Search
IRFY430CM datasheet
irfy430cm.pdf
PD - 91291C IRFY430C,IRFY430CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430C 1.5 4.5A Ceramic IRFY430CM 1.5 4.5A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo... See More ⇒
irfy430c.pdf
PD - 91291C IRFY430C,IRFY430CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430C 1.5 4.5A Ceramic IRFY430CM 1.5 4.5A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo... See More ⇒
irfy430.pdf
PD - 94191 IRFY430,IRFY430M POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430 1.5 4.5A Glass IRFY430M 1.5 4.5A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-stat... See More ⇒
irfy430m.pdf
N-CHANNEL POWER MOSFET IRFY430 / IRFY430M BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 500V VGS Gate Source Voltage 20V ID Tc = 25 C... See More ⇒
Detailed specifications: IRFY320, IRFY320C, IRFY330, IRFY330C, IRFY340CM, IRFY340M, IRFY420, IRFY420C, IRF530, IRFY430M, IRFY440CM, IRFY440-T257, IRFY540, IRFY9130CM, IRFY9130M, IRFY9140CM, IRFY9140M
Keywords - IRFY430CM MOSFET specs
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