IRFY540 Datasheet and Replacement
Type Designator: IRFY540
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id| ⓘ - Maximum Drain Current: 18 A
tr ⓘ - Rise Time: 145 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
Package: TO-257AB
IRFY540 substitution
IRFY540 Datasheet (PDF)
irfy540.pdf

IRFY540Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 18A RDS(ON) = 0.092 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J
Datasheet: IRFY340CM , IRFY340M , IRFY420 , IRFY420C , IRFY430CM , IRFY430M , IRFY440CM , IRFY440-T257 , 20N50 , IRFY9130CM , IRFY9130M , IRFY9140CM , IRFY9140M , IRFY9140X , IRFY9230 , IRFY9240CM , IRFY9240M .
History: SPD30N03S2L-20G | P0765JD | AP3A010MT | WFP8N60 | CEB13N5 | HM70N80A | AP4910GD
Keywords - IRFY540 MOSFET datasheet
IRFY540 cross reference
IRFY540 equivalent finder
IRFY540 lookup
IRFY540 substitution
IRFY540 replacement
History: SPD30N03S2L-20G | P0765JD | AP3A010MT | WFP8N60 | CEB13N5 | HM70N80A | AP4910GD



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