IRFY540 Specs and Replacement
Type Designator: IRFY540
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id| ⓘ - Maximum Drain Current: 18 A
Electrical Characteristics
tr ⓘ - Rise Time: 145 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
Package: TO-257AB
IRFY540 substitution
- MOSFET ⓘ Cross-Reference Search
IRFY540 datasheet
irfy540.pdf
IRFY540 Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 18A RDS(ON) = 0.092 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, J... See More ⇒
Detailed specifications: IRFY340CM, IRFY340M, IRFY420, IRFY420C, IRFY430CM, IRFY430M, IRFY440CM, IRFY440-T257, STP80NF70, IRFY9130CM, IRFY9130M, IRFY9140CM, IRFY9140M, IRFY9140X, IRFY9230, IRFY9240CM, IRFY9240M
Keywords - IRFY540 MOSFET specs
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