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2N6756JTX Spec and Replacement


   Type Designator: 2N6756JTX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: TO204
 

 2N6756JTX substitution

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2N6756JTX Specs

 8.1. Size:147K  international rectifier
 2n6756 irf130.pdf pdf_icon

2N6756JTX

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique process... See More ⇒

 8.2. Size:136K  fairchild semi
 2n6755 2n6756.pdf pdf_icon

2N6756JTX

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 9.1. Size:147K  international rectifier
 2n6758 irf230.pdf pdf_icon

2N6756JTX

PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique... See More ⇒

 9.2. Size:141K  fairchild semi
 2n6757 2n6758.pdf pdf_icon

2N6756JTX

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Detailed specifications: 2N6661JANTXV , 2N6661-LCC4 , 2N6661SM , 2N6755 , 2N6756 , 2N6756JAN , 2N6756JANTX , 2N6756JANTXV , IRFP260 , 2N6756JTXV , 2N6757 , 2N6758 , 2N6758JAN , 2N6758JANTX , 2N6758JANTXV , 2N6758JTX , 2N6758JTXV .

Keywords - 2N6756JTX MOSFET specs

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