IRHF597230
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHF597230
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54
Ohm
Package:
TO-39
IRHF597230
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHF597230
Datasheet (PDF)
..1. Size:122K international rectifier
irhf597230.pdf 
PD - 94450RADIATION HARDENED IRHF597230POWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF597230 100K Rads (Si) 0.54 -4.5A IRHF593230 300K Rads (Si) 0.54 -4.5AT0-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. These devices have
7.1. Size:203K international rectifier
irhf597130.pdf
PD-96963RADIATION HARDENED IRHF597130POWER MOSFET100V, P-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF597130 100K Rads (Si) 0.24 -6.7A IRHF593130 300K Rads (Si) 0.24 -6.7A TO-39International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli-n Single Event
7.2. Size:131K international rectifier
irhf597110.pdf
PD - 94176CRADIATION HARDENED IRHF597110POWER MOSFET100V, P-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44 #cProduct Summary Part Number Radiation Level RDS(on) ID IRHF597110 100K Rads (Si) 1.0 -2.6A IRHF593110 300K Rads (Si) 1.0 -2.6ATO-39International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli- Single Event Eff
9.1. Size:128K international rectifier
irhf57133se.pdf
PD - 94334ARADIATION HARDENED IRHF57133SEPOWER MOSFET130V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57133SE 100K Rads (Si) 0.1 10.5ATO-39International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardenedcations. These dev
9.2. Size:216K international rectifier
irhf57214se.pdf
PD-97063ARADIATION HARDENED IRHF57214SEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF57214SE 100K Rads (Si) 1.55 2.2ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:for Single
9.3. Size:129K international rectifier
irhf57z30.pdf
PD - 93793ARADIATION HARDENED IRHF57Z30POWER MOSFET30V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57Z30 100K Rads (Si) 0.045 12A* IRHF53Z30 300K Rads (Si) 0.045 12A* IRHF54Z30 600K Rads (Si) 0.045 12A* IRHF58Z30 1000K Rads (Si) 0.056 12A*TO-39International Rectifiers R5TM technology provid
9.4. Size:130K international rectifier
irhf57034.pdf
PD - 93791RADIATION HARDENED IRHF57034POWER MOSFET60V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57034 100K Rads (Si) 0.048 12*A IRHF53034 300K Rads (Si) 0.048 12*A IRHF54034 600K Rads (Si) 0.048 12*A IRHF58034 1000K Rads (Si) 0.060 12*ATO-39International Rectifiers R5TM technology provides
9.5. Size:113K international rectifier
irhf57130.pdf
PD - 93789ARADIATION HARDENED IRHF57130POWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57130 100K Rads (Si) 0.08 11.7A IRHF53130 300K Rads (Si) 0.08 11.7A IRHF54130 600K Rads (Si) 0.08 11.7A IRHF58130 1000K Rads (Si) 0.10 11.7ATO-39International Rectifiers R5TM technology provides
9.6. Size:187K international rectifier
irhf57234se.pdf
PD-93831BRADIATION HARDENED IRHF57234SEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF57234SE 100K Rads (Si) 0.42 5.2ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:for Single
9.7. Size:127K international rectifier
irhf57230se.pdf
PD - 93857ARADIATION HARDENED IRHF57230SEPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230SE 100K Rads (Si) 0.24 7.0ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized for Si
9.8. Size:129K international rectifier
irhf57230.pdf
PD - 93788ARADIATION HARDENED IRHF57230POWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230 100K Rads (Si) 0.22 7.3A IRHF53230 300K Rads (Si) 0.22 7.3A IRHF54230 600K Rads (Si) 0.22 7.3A IRHF58230 1000K Rads (Si) 0.275 7.3ATO-39International Rectifiers R5TM technology provides
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