IXFN48N50U3 Datasheet. Specs and Replacement
Type Designator: IXFN48N50U3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT227B
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IXFN48N50U3 substitution
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IXFN48N50U3 datasheet
ixfn44n50u2-u3 ixfn48n50u2-u3.pdf
VDSS ID (cont) RDS(on) trr HiPerFETTM 500 V 44 A 0.12 W 35 ns IXFN44N50U2 IXFN44N50U3 Power MOSFETs IXFN48N50U2 IXFN48N50U3 500 V 48 A 0.10 W 35 ns 3 3 Buck & Boost Configurations for PFC & Motor Control Circuits 4 2 2 Preliminary data 4 1 1 miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings 1 VDSS TJ = 25 C to 150 C 500 V 2 VDGR TJ = 25 C to 150 C; RGS = 1 MW 5... See More ⇒
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C ... See More ⇒
ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C ... See More ⇒
Detailed specifications: IXFN36N60, IXFN39N90, IXFN44N50, IXFN44N50U2, IXFN44N50U3, IXFN44N60, IXFN44N80, IXFN48N50, IRF1404, IXFN50N50, IXFN55N50, IXFN60N60, IXFN73N30, IXFN80N50, IXFN90N30, IXFR10N100Q, IXFR120N20
Keywords - IXFN48N50U3 MOSFET specs
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