IXFN48N50U3 MOSFET Datasheet: N-Ch, 500V, 48A. Full specification with pinout and replacement list

IXFN48N50U3 Specs and Replacement

Type Designator: IXFN48N50U3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 900 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT227B

IXFN48N50U3 substitution

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IXFN48N50U3 datasheet

4.1. Size:151K ixys
ixfn44n50u2-u3 ixfn48n50u2-u3.pdf pdf_icon

VDSS ID (cont) RDS(on) trr HiPerFETTM 500 V 44 A 0.12 W 35 ns IXFN44N50U2 IXFN44N50U3 Power MOSFETs IXFN48N50U2 IXFN48N50U3 500 V 48 A 0.10 W 35 ns 3 3 Buck & Boost Configurations for PFC & Motor Control Circuits 4 2 2 Preliminary data 4 1 1 miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings 1 VDSS TJ = 25 C to 150 C 500 V 2 VDGR TJ = 25 C to 150 C; RGS = 1 MW 5... See More ⇒

5.1. Size:162K ixys
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C ... See More ⇒

5.2. Size:108K ixys
ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf pdf_icon