All MOSFET. IXFN55N50 Datasheet

 

IXFN55N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFN55N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 330 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT227B

 IXFN55N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN55N50 Datasheet (PDF)

 ..1. Size:577K  ixys
 ixfk55n50 ixfx55n50 ixfn55n50.pdf

IXFN55N50 IXFN55N50

VDSS = 500 VIXFK 55N50HiPerFETTMID25 = 55 AIXFX 55N50Power MOSFETRDS(on) = 90mIXFN 55N50 250 nstrr Single Die MOSFETSymbol Test Conditions Maximum RatingsPLUS247(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C 500 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)GCID25 TC = 25C55 AEIDM TC = 2

 ..2. Size:121K  ixys
 ixfk50n50 ixfn50n50 ixfk55n50 ixfn55n50.pdf

IXFN55N50 IXFN55N50

VDSS ID25 RDS(on) trrHiPerFETTMPower MOSFET IXFN 55N50 500V 55A 80m 250nsIXFN 50N50 500V 50A 100m 250nsIXFK 55N50 500V 55A 80m 250nsSingle Die MOSFETIXFK 50N50 500V 50A 100m 250nsPreliminary data sheetTO-264 AA (IXFK)Symbol Test Conditions Maximum Ratings IXFNIXFK IXFK IXFN55N50 50N50 55N50 50N50VDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C to 150C

 0.1. Size:104K  ixys
 ixfn55n50f.pdf

IXFN55N50 IXFN55N50

Advance Technical InformationHiPerRFTM IXFN 55N50F VDSS = 500 VPower MOSFETs ID25 = 55 AF-Class: MegaHertz SwitchingRDS(on) = 85 mDN-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic RGgHigh dV/dt, Low trrSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to

 9.1. Size:113K  ixys
 ixfn52n90p.pdf

IXFN55N50 IXFN55N50

Preliminary Technical InformationPolarTM Power MOSFET VDSS = 900VIXFN52N90PID25 = 43AHiPerFETTM RDS(on) 160m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeminiBLOC, SOT-227Symbol Test Conditions Maximum RatingsE153432SVDSS TJ = 25C to 150C 900 VGVDGR TJ = 25C to 150C, RGS

Datasheet: IXFN44N50 , IXFN44N50U2 , IXFN44N50U3 , IXFN44N60 , IXFN44N80 , IXFN48N50 , IXFN48N50U3 , IXFN50N50 , 50N06 , IXFN60N60 , IXFN73N30 , IXFN80N50 , IXFN90N30 , IXFR10N100Q , IXFR120N20 , IXFR12N100Q , IXFR15N80Q .

 

 
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