IXFN80N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFN80N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 780 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 380 nC
Maximum Drain-Source On-State Resistance (Rds): 0.048 Ohm
Package: SOT227B
IXFN80N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFN80N50 Datasheet (PDF)
1.1. ixfn80n50p.pdf 
Size:157K _ixys
IXFN 80N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 66 A Power MOSFET ? ? RDS(on) ? 65 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V S VGS Transient 40 V G VGSM Continuous
1.2. ixfn80n50.pdf Size:572K _ixys
IXFN 80N50 VDSS = 500 V HiPerFETTM ID25 = 80 A Power MOSFETs ? RDS(on) = 55 m? ? ? ? Single Die MOSFET D trr ? 250 ns ? ? ? ? N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C 500 V S VDGR TJ = 25C to 150C; RGS = 1 M? 500 V G VGS Continuous 20 V VGSM T
5.1. ixfn82n60p.pdf Size:152K _ixys
IXFN 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET ? ? RDS(on) ? 75 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 600 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transie
Datasheet: IXFN44N60 , IXFN44N80 , IXFN48N50 , IXFN48N50U3 , IXFN50N50 , IXFN55N50 , IXFN60N60 , IXFN73N30 , IRF630 , IXFN90N30 , IXFR10N100Q , IXFR120N20 , IXFR12N100Q , IXFR15N80Q , IXFR180N07 , IXFR180N085 , IXFR180N10 .
