IXFN80N50 MOSFET Datasheet: N-Ch, 500V, 80A. Full specification with pinout and replacement list

IXFN80N50 Specs and Replacement

Type Designator: IXFN80N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 780 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1750 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT227B

IXFN80N50 substitution

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IXFN80N50 datasheet

..1. Size:572K ixys
ixfn80n50.pdf pdf_icon

IXFN 80N50 VDSS = 500 V HiPerFETTM ID25 = 80 A Power MOSFETs RDS(on) = 55 m Single Die MOSFET D trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G ... See More ⇒

0.1. Size:157K ixys
ixfn80n50p.pdf pdf_icon

IXFN 80N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 66 A Power MOSFET RDS(on) 65 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V S ... See More ⇒

9.1. Size:152K ixys
ixfn82n60p.pdf pdf_icon

IXFN 82N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 82 A Power MOSFET RDS(on) 75 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 600 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M 600... See More ⇒

Detailed specifications: IXFN44N60 , IXFN44N80 , IXFN48N50 , IXFN48N50U3 , IXFN50N50 , IXFN55N50 , IXFN60N60 , IXFN73N30 , IRF640 , IXFN90N30 , IXFR10N100Q , IXFR120N20 , IXFR12N100Q , IXFR15N80Q , IXFR180N07 , IXFR180N085 , IXFR180N10 .